Calculations of electron inelastic mean free paths. V. Data for 14 organic compounds over the 50–2000 eV range

S Tanuma, CJ Powell, DR Penn - Surface and interface …, 1994 - Wiley Online Library
We report calculations of electron inelastic mean free paths (IMFPs) of 50–2000 eV
electrons for a group of 14 organic compounds: 26‐n‐paraffin, adenine, β‐carotene, bovine …

[图书][B] Electrical properties of polymers

AR Blythe, D Bloor - 2005 - books.google.com
The second edition of this successful title provides a timely update on the fundamentals and
recent advancements in the field of electrical and electronic properties of polymers. It …

[图书][B] Excitation of plasmons and interband transitions by electrons

H Raether - 2006 - books.google.com
" This book treats the physics of Electron Loss Spectroscopy (ELS) with electrons of different
energies. Its emphasis is on the collective excitations or plasmons in the bulk as well as on …

[图书][B] Interaction of radiation with matter

H Nikjoo, S Uehara, D Emfietzoglou - 2012 - books.google.com
Interaction of Radiation with Matter focuses on the physics of the interactions of ionizing
radiation in living matter and the Monte Carlo simulation of radiation tracks. Clearly …

Interaction of low-energy electrons with condensed matter: stopping powers and inelastic mean free paths from optical data

JC Ashley - Journal of electron spectroscopy and related …, 1988 - Elsevier
A model is described for evaluating energy loss per unit pathlength and inelastic mean free
path for low-energy electrons (≲ 10 keV) from optical data on the medium of interest …

Calculations of electron inelastic mean free paths. XIII. Data for 14 organic compounds and water over the 50 eV to 200 keV range with the relativistic full Penn …

H Shinotsuka, S Tanuma… - Surface and Interface …, 2022 - Wiley Online Library
We have calculated inelastic mean free paths (IMFPs) for 14 organic compounds (26‐n‐
paraffin, adenine, β‐carotene, diphenyl‐hexatriene, guanine, Kapton, polyacetylene, poly …

Resolution limits for electron-beam lithography

AN Broers - IBM Journal of Research and Development, 1988 - ieeexplore.ieee.org
This paper discusses resolution limits for electron-beam fabrication. Electron beams have
been used to produce structures 1 nm in size and useful devices with minimum features of …

A Maxwell Garnett model for dielectric mixtures containing conducting particles at optical frequencies

M Koledintseva, R DuBroff, R Schwartz - Progress in electromagnetics …, 2006 - jpier.org
Mathematical modeling of composites made of a dielectric base and randomly oriented
metal inclusions is considered. Different sources of frequency-dependent metal conductivity …

Sub‐10 nm lithography with self‐assembled monolayers

MJ Lercel, HG Craighead, AN Parikh… - Applied physics …, 1996 - pubs.aip.org
Dots demonstrating critical resist dimensions of approximately 5 to 6 nm were formed in an
octadecylsiloxane monolayer on silicon by electron beam exposure using a digital scanning …

Secondary electrons in EUV lithography

J Torok, R Del Re, H Herbol, S Das… - Journal of …, 2013 - jstage.jst.go.jp
Secondary electrons play critical roles in several imaging technologies, including extreme
ultraviolet (EUV) lithography. At longer wavelengths of light (eg 193 and 248 nm), the …