MgxZn1− xO-based photodetectors covering the whole solar-blind spectrum range
A series of Mg x Zn 1− x O thin films has been prepared by metalorganic chemical vapor
deposition and metal-semiconductor-metal structured ultraviolet photodetectors are …
deposition and metal-semiconductor-metal structured ultraviolet photodetectors are …
Avalanche multiplication in AlGaN based solar-blind photodetectors
R McClintock, A Yasan, K Minder, P Kung… - Applied Physics …, 2005 - pubs.aip.org
Avalanche multiplication has been observed in solar-blind AlGaN-based pin photodiodes.
Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively …
Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively …
AlxGa1− xN-based avalanche photodiodes with high reproducible avalanche gain
The authors report high performance solar-blind photodetectors with reproducible
avalanche gain as high as 1560 under ultraviolet illumination. The solar-blind …
avalanche gain as high as 1560 under ultraviolet illumination. The solar-blind …
AlN avalanche photodetectors
R Dahal, TM Al Tahtamouni, JY Lin… - Applied Physics Letters, 2007 - pubs.aip.org
Deep ultraviolet (DUV) avalanche photodetectors (APDs) based on an Al N∕ n-Si C
Schottky diode structure have been demonstrated. The device with a mesa diameter of∼ …
Schottky diode structure have been demonstrated. The device with a mesa diameter of∼ …
High-performance amorphous BeZnO-alloy-based solar-blind ultraviolet photodetectors on rigid and flexible substrates
E Wentao, M Li, D Meng, Y Cheng, W Fu, P Ye… - Journal of Alloys and …, 2020 - Elsevier
In this study, the bandgap of ternary alloy BeZnO was modulated to make the material
applicable to solar-blind ultraviolet (UV) radiation detection. This was done by preparing …
applicable to solar-blind ultraviolet (UV) radiation detection. This was done by preparing …
Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes
GaN/AlGaN avalanche photodiodes (APD) are fabricated based on GaN/AlGaN materials of
epitaxial growth. Dark current and photoresponse characteristics are shown experimentally …
epitaxial growth. Dark current and photoresponse characteristics are shown experimentally …
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors
M Moresco, F Bertazzi, E Bellotti - Journal of Applied Physics, 2009 - pubs.aip.org
The coming to age of GaN-based ultraviolet avalanche photodiodes (APDs) has made them
increasingly preferred over PIN photodetectors in several areas spanning from …
increasingly preferred over PIN photodetectors in several areas spanning from …
Mean multiplication gain and excess noise factor of GaN and Al0. 45Ga0. 55N avalanche photodiodes
In this work, Monte Carlo model is developed to investigate the avalanche characteristics of
GaN and Al 0.45 Ga 0.55 N avalanche photodiodes (APDs) using random ionization path …
GaN and Al 0.45 Ga 0.55 N avalanche photodiodes (APDs) using random ionization path …
[图书][B] Voltage stability impact of grid-tied photovoltaic systems utilizing dynamic reactive power control
A Omole - 2010 - search.proquest.com
Photovoltaic (PV) DGs can be optimized to provide reactive power support to the grid,
although this feature is currently rarely utilized as most DG systems are designed to operate …
although this feature is currently rarely utilized as most DG systems are designed to operate …
Efficiency and harmonic enhancement trends in GaN-based Gunn diodes: Ensemble Monte Carlo analysis
C Sevik, C Bulutay - Applied physics letters, 2004 - pubs.aip.org
Gallium nitride can offer a high-power alternative for millimeter-wave Gunn oscillators.
Hence, an ensemble Monte Carlo-based comprehensive theoretical assessment of …
Hence, an ensemble Monte Carlo-based comprehensive theoretical assessment of …