Design of an intelligent Near-Infrared responsive antibacterial Nano-Platform based on MoS2/Cu3Mo2O9
Z Xia, X Tian, P Xu, B Cheng, H Xu, S Guang - Chemical Engineering …, 2024 - Elsevier
In this era of high drug resistance, there is an urgent need for novel antimicrobial agents and
strategies to achieve smarter sterilization effects. However, developing an environmentally …
strategies to achieve smarter sterilization effects. However, developing an environmentally …
Spin–orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the ternary bismuth sulfide Bi2S2.75Se0.25: Ab-initio calculations
H Ben Abdallah, W Ouerghui - Optical and Quantum Electronics, 2022 - Springer
Although the relevant properties of the bismuthinite Bi 2 S 3, it was recently approved that
the substitution of Se atoms in the Bi 2 S 3 lattice can significantly enhance its electro-optical …
the substitution of Se atoms in the Bi 2 S 3 lattice can significantly enhance its electro-optical …
Principle of vanadium doping-induced MoS2 homojunction effect and mechanism analysis of antibacterial process under near-infrared light
Z Xia, N Wang, X Tian, P Xu, B Cheng, H Xu… - Separation and …, 2025 - Elsevier
MoS 2 exhibits unique physical and chemical properties in its 1 T and 2H phases. Each
phase has its inherent advantages and limitations. Although several biochemical properties …
phase has its inherent advantages and limitations. Although several biochemical properties …
DFT calculations on ZnO1−x compounds for optoelectronic applications
W Ouerghui, MS Alkhalifah, HB Abdallah - Journal of Computational …, 2021 - Springer
Abstract The ZnO _ 1-x ZnO 1-x compounds were studied theoretically using the full-
potential linearized augmented plane wave (FP-LAPW) method in the modified Becke …
potential linearized augmented plane wave (FP-LAPW) method in the modified Becke …
DFT calculations of optoelectronic properties of cubic alloys
MS Alkhalifah, W Ouerghui - Journal of Computational Electronics, 2021 - Springer
The substitutional semiconductor obtained by doping In _ 2 O _ 3 In 2 O 3 with aluminum
metal has potential applications in high-quality gas sensors and nanoelectronic devices …
metal has potential applications in high-quality gas sensors and nanoelectronic devices …
Hybrid functional calculations of electro-optical properties of novel Ga1−xInxTe ternary chalcogenides
H Ben Abdallah, W Ouerghui - Applied Physics A, 2020 - Springer
Doping GaTe semiconductor with indium can be beneficial in the realization of high-quality
radiation detectors. In this study, first-principle calculations based on the density functional …
radiation detectors. In this study, first-principle calculations based on the density functional …
Ab Initio Study of Structural, Electronic, and Magnetic Properties of Mn x BVI: In1−x Mn x S-Diluted Magnetic …
First-principles density functional calculations on the new class of diluted magnetic
semiconductor A 1− x III Mn x B VI A_1-x^IIIMn_xB^VI In 1− x Mn x S for x= 0.25 and 0.5 are …
semiconductor A 1− x III Mn x B VI A_1-x^IIIMn_xB^VI In 1− x Mn x S for x= 0.25 and 0.5 are …
[PDF][PDF] Temperature dependence of the electrical conductivity and hall effect of thallium gallium disulphide single crystals
AT Nagat, SA Hussein, S Garni, SR Alharbi - Chalcogenide Letters, 2015 - chalcogen.ro
Over the past three decades, significant interest has arisen in chalcogenide semiconductors
because of their interesting physical properties as well as their wide-ranging technological …
because of their interesting physical properties as well as their wide-ranging technological …
Trapping center parameters in In6S7 crystals
M Isik, NM Gasanly - Physica B: Condensed Matter, 2011 - Elsevier
Thermally stimulated current measurements were carried out on In 6 S 7 single crystals in
the temperature range of 10–225 K with a constant heating rate of 0.8 K/s. The study of …
the temperature range of 10–225 K with a constant heating rate of 0.8 K/s. The study of …