This review explores the performance and reliability of power semiconductor devices
required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification …

SiC MOSFETs have been a game-changer in the domain of power electronics, thanks to
their exceptional electrical traits. They are endowed with a high breakdown voltage, reduced …

We developed a new pulsed power supply to study the influence of the high-voltage (HV)
pulse shape on the generation of plasma-activated water (PAW). This article shows the …

This letter proposes a fast overcurrent protection integrated circuit (IC) for silicon carbide
(SiC) mosfet based on current detection. With the proposed protection IC, the voltage …

The conventional TO-247-3 packages with single-sided cooling limit the thermal and
electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided …

The development of current sensors for wide-bandgap (WBG) applications consistently
emphasizes high bandwidth, minimal invasiveness, and integration. Despite the meticulous …

In this article, a robust short-circuit (SC) protection circuit using Rogowski current sensor
(RCS) for SiC mosfet-based power conversion systems is proposed, along with the detailed …

Rogowski coil (RC) has been commonly employed in power electronics due to its benefits of
galvanic isolation, high-current measurement capability, and simple integration. However …

Junction temperature estimation with high precision is crucial to the reliability and safe
operating of silicon-carbide (SiC) metal–oxide–semiconductor field-effect transistors …

The low Short Circuit Withstand Time (SCWT) offered by GaN HEMTs imposes challenges
on their reliability, especially in medium to high power applications such as electric vehicle …