Enhanced electron mobility in strained Si/SiGe 19nm n-channel MOSFET device

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Influence of Buffer Length and Mole Fraction on Analog Performances of a Symmetrical Underlapped DG Si/SiGe-based MOS-HEMT Device

A Kashyap, S Roy, R Ghosh, FA Khan… - 2024 IEEE 3rd …, 2024 - ieeexplore.ieee.org
The Authors through this paper have investigated and performed an in-depth study of the
Analog performances of an Underlapped Dual Gate (U-DG) Si/SiGe Metal Oxide …
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