In order to continue to fulfill the ever-increasing demands on ultra-fast microprocessors, a
revolution in silicon photonics communication is necessary. Traditional CMOS, FinFET, and …

The fabrication of nanoelectronic and nanophotonic devices based on embedded quantum
structures has become feasible over the last decades, and the field is continuously …

In this paper, we present the design of a silicon optoelectronic device capable of speeding
up processing capabilities. The data in this device are electronic, while the modulation …

The frequency dependence of the capacitance variation between dark and near-infrared-
modulated illumination conditions is measured for metal-oxide-semiconductor structures …

Ultra-fast electrical switches activated with an optical-polarized light trigger, also called
photo-polarized activated electrical switches, are presented. A set of new transistor circuits is …

A new nanoscale silicon‐based modulator has been investigated at different temperatures.
In addition to these two advantages, nanoscale dimensions (versus MEMS temperature …

Traditional CMOS and FinFET shrinking techniques have begun to reach the physical limits
of available materials, and a revolution in silicon photonics communication is necessary to …

In the race to realize ultrahigh-speed processors, silicon photonics research is part of the
efforts. Overcoming the silicon indirect bandgap with special geometry, we developed a …

A new type of silicon MOSFET transistor, coupling both electronic and optical properties, is
developed in order to overcome the indirect silicon bandgap constraint, and to serve as a …

A Y-junction of low-difference refractive-index (RI) and coupler as its input was designed
and simulated. The simulation uses COMSOL Multi-Physics Software Package, allowing …