Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Review and outlook on GaN and SiC power devices: industrial state-of-the-art, applications, and perspectives
We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride
(GaN) transistors available on the market for current and next-generation power electronics …
(GaN) transistors available on the market for current and next-generation power electronics …
In-situ RDS(on) Characterization and Lifetime Projection of GaN HEMTs Under Repetitive Overvoltage Switching
R Zhang, R Garcia, R Strittmatter… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Transient voltage overshoot is a common phenomenon in GaN high electron mobility
transistors (HEMTs) under high slew rate switching conditions. The dynamic parametric …
transistors (HEMTs) under high slew rate switching conditions. The dynamic parametric …
Trap-state mapping to model GaN transistors dynamic performance
Trapping phenomena degrade the dynamic performance of wide-bandgap transistors.
However, the identification of the related traps is challenging, especially in presence of non …
However, the identification of the related traps is challenging, especially in presence of non …
IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs
The dynamic on-resistance (r ON) of two mainstream 600 V/650 V p-GaN gate power high-
electron-mobility transistors (HEMTs) with Ohmic-and Schottky-type p-GaN gate contacts are …
electron-mobility transistors (HEMTs) with Ohmic-and Schottky-type p-GaN gate contacts are …
Cumulative hot-electron trapping in GaN-based power HEMTs observed by an ultrafast (10 V/Ns) on-wafer methodology
The goal of this article is to advance the understanding of the impact of hard switching on the
dynamic performance of GaN-based high electron mobility transistors (HEMTs). To this aim …
dynamic performance of GaN-based high electron mobility transistors (HEMTs). To this aim …
Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy
J Chen, W Huang, H Qu, Y Zhang, J Zhou… - Applied Physics …, 2022 - pubs.aip.org
Properties of minority carrier (electron) traps in Schottky type p-GaN gate high electron
mobility transistors were explicitly investigated by optical deep level transient spectroscopy …
mobility transistors were explicitly investigated by optical deep level transient spectroscopy …
Normally-OFF p-GaN gate double-channel HEMT with suppressed hot-electron-induced dynamic on-resistance degradation
Hot electrons with high kinetic energy could be generated in the channel of GaN high-
electron-mobility transistors (HEMTs) during hard switching operation. Those “lucky” hot …
electron-mobility transistors (HEMTs) during hard switching operation. Those “lucky” hot …
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
In this paper, for the first time the threshold voltage instability of 100 V rated p-GaN power
HEMTs is investigated by combined pulsed-IV measurements and capture and emission …
HEMTs is investigated by combined pulsed-IV measurements and capture and emission …