Surface passivation of crystalline silicon solar cells: Present and future

J Schmidt, R Peibst, R Brendel - Solar Energy Materials and Solar Cells, 2018 - Elsevier
In the first part of this paper, we review the developments which led to the present state-of-
the-art in the surface passivation of today's industrially predominant dopant-diffused …

[HTML][HTML] Black silicon: fabrication methods, properties and solar energy applications

X Liu, PR Coxon, M Peters, B Hoex, JM Cole… - Energy & …, 2014 - pubs.rsc.org
Black silicon (BSi) represents a very active research area in renewable energy materials.
The rise of BSi as a focus of study for its fundamental properties and potentially lucrative …

n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation

A Richter, J Benick, F Feldmann, A Fell… - Solar Energy Materials …, 2017 - Elsevier
In this work, the efficiency of n-type silicon solar cells with a front side boron-doped emitter
and a full-area tunnel oxide passivating electron contact was studied experimentally as a …

Passivating contacts for crystalline silicon solar cells: From concepts and materials to prospects

J Melskens, BWH van de Loo, B Macco… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to
reduce the recombination losses associated with the contacts. Therefore, a contact structure …

SiO2 surface passivation layers–a key technology for silicon solar cells

SW Glunz, F Feldmann - Solar Energy Materials and Solar Cells, 2018 - Elsevier
High-efficiency silicon solar cells strongly rely on an effective reduction of charge carrier
recombination at their surfaces, ie surface passivation. Today's industrial silicon solar cells …

Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

G Dingemans, WMM Kessels - … of Vacuum Science & Technology A, 2012 - pubs.aip.org
The reduction in electronic recombination losses by the passivation of silicon surfaces is a
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …

Plasma-assisted atomic layer deposition: basics, opportunities, and challenges

HB Profijt, SE Potts, MCM Van de Sanden… - Journal of Vacuum …, 2011 - pubs.aip.org
Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …

High-efficiency n-type HP mc silicon solar cells

J Benick, A Richter, R Müller, H Hauser… - IEEE journal of …, 2017 - ieeexplore.ieee.org
Silicon solar cells featuring the highest conversion efficiencies are made from
monocrystalline n-type silicon. The superior crystal quality of high-performance …

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

B Hoex, JJH Gielis, MCM Van de Sanden… - Journal of Applied …, 2008 - pubs.aip.org
Al 2 O 3 is a versatile high-κ dielectric that has excellent surface passivation properties on
crystalline Si (c-Si)⁠, which are of vital importance for devices such as light emitting diodes …

State-of-the-art passivation strategies of c-Si for photovoltaic applications: A review

SP Muduli, P Kale - Materials Science in Semiconductor Processing, 2023 - Elsevier
The carrier recombination is a major bottleneck in enhancing the power conversion
efficiency of first-generation solar cells. As a remedy, passivation minimizes the …