Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Materials characterization by synchrotron x-ray microprobes and nanoprobes
In recent years synchrotron x-ray microprobes and nanoprobes have emerged as key
characterization tools with a remarkable impact for different scientific fields including solid …
characterization tools with a remarkable impact for different scientific fields including solid …
Nanoscale TiO2 membrane coating spinel LiNi0. 5Mn1. 5O4 cathode material for advanced lithium-ion batteries
S Tao, F Kong, C Wu, X Su, T Xiang, S Chen… - Journal of Alloys and …, 2017 - Elsevier
Abstract Spinel LiNi 0.5 Mn 1.5 O 4 (LNMO) is one of the most promising high voltage
cathode materials for future application. Herein, we report a simple method to prepare …
cathode materials for future application. Herein, we report a simple method to prepare …
Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach
The next generation of nonvolatile memory storage may well be based on resistive switching
in metal oxides. TiO2 as transition metal oxide has been widely used as active layer for the …
in metal oxides. TiO2 as transition metal oxide has been widely used as active layer for the …
[HTML][HTML] Organismic materials for beyond von Neumann machines
The elementary basis of intelligence in organisms with a central nervous system includes
neurons and synapses and their complex interconnections forming neural circuits. In non …
neurons and synapses and their complex interconnections forming neural circuits. In non …
Challenges and solutions in emerging memory testing
The research and prototyping of new memory technologies are getting a lot of attention in
order to enable new (computer) architectures and provide new opportunities for today's and …
order to enable new (computer) architectures and provide new opportunities for today's and …
Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al2O3/TiOx‐Based Memristive Devices
Memristive devices with valence change mechanism (VCM) show promise for neuromorphic
data processing, although emulation of synaptic behavior with analog weight updates …
data processing, although emulation of synaptic behavior with analog weight updates …
Relationship between resistive switching and Mott transition in atomic layer deposition prepared La2Ti2O7-x thin film
Y Wang, M Kim, AS Chabungbam, D Kim, Q Shao… - Scripta Materialia, 2023 - Elsevier
This study prepared Mott-metal state thin film La 2 Ti 2 O 7-x on TiN substrate using atomic
layer deposition, and confirmed W/La 2 Ti 2 O 7-x/TiN clockwise forming-less resistive …
layer deposition, and confirmed W/La 2 Ti 2 O 7-x/TiN clockwise forming-less resistive …
[HTML][HTML] Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation
Resistive switching devices based on transition metal oxides require formation of a
conductive filament in order for the device to be able to switch. Such filaments have been …
conductive filament in order for the device to be able to switch. Such filaments have been …
[HTML][HTML] Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy
A Kindsmüller, C Schmitz, C Wiemann, K Skaja… - APL materials, 2018 - pubs.aip.org
The switching mechanism of valence change resistive memory devices is widely accepted to
be an ionic movement of oxygen vacancies resulting in a valence change of the metal …
be an ionic movement of oxygen vacancies resulting in a valence change of the metal …