Highly efficient GaN-based high-power flip-chip light-emitting diodes
S Zhou, X Liu, H Yan, Z Chen, Y Liu, S Liu - Optics express, 2019 - opg.optica.org
High-power flip-chip light-emitting diodes (FCLEDs) suffer from low efficiencies because of
poor p-type reflective ohmic contact and severe current crowding. Here, we show that it is …
poor p-type reflective ohmic contact and severe current crowding. Here, we show that it is …
Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for …
We report on the unambiguous detection of Auger electrons by electron emission
spectroscopy from a cesiated InGaN/GaN light-emitting diode under electrical injection …
spectroscopy from a cesiated InGaN/GaN light-emitting diode under electrical injection …
Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting
JJ Wierer Jr, JY Tsao, DS Sizov - Laser & Photonics Reviews, 2013 - Wiley Online Library
Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes
Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”
In this paper, we review the recent developments (in years 2010–2011) of energy-saving
solid-state lighting. The industry of white light-emitting diodes (LEDs) has made significant …
solid-state lighting. The industry of white light-emitting diodes (LEDs) has made significant …
Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios
The fabrication studies of silica/polystyrene (PS) colloidal microlens arrays with various
aspect ratios were performed on the III-nitride light-emitting diodes (LEDs). The use of …
aspect ratios were performed on the III-nitride light-emitting diodes (LEDs). The use of …
N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs
A high efficiency, high brightness, and robust micro or sub-microscale red light emitting
diode (LED) is an essential, yet missing, component of the emerging virtual reality and future …
diode (LED) is an essential, yet missing, component of the emerging virtual reality and future …
Measuring the internal quantum efficiency of light-emitting diodes: Towards accurate and reliable room-temperature characterization
For accurate and reliable measurement of the internal quantum efficiency (IQE) of light-
emitting diodes (LEDs), the method should be theoretically solid and experimentally simple …
emitting diodes (LEDs), the method should be theoretically solid and experimentally simple …