InAlAs digital alloy avalanche photodiodes exhibit lower excess noise than those fabricated
from conventional random alloy material. Experiment and Monte Carlo simulation both show …

Digital alloy AlInAsSb avalanche photodiodes exhibit low excess noise comparable to those
fabricated from Si. The electron and hole ionization coefficients are critical parameters for …

Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess
noise. In this article, we investigate the band structure‐related mechanisms that influence …

InAlAs digital alloy avalanche photodiodes (APDs) exhibit lower noise than their random
alloy counterparts. The electronic dispersion properties of digital alloy materials are unique …

Traditional GaN-based metal-semiconductor-metal (MSM) photodetector (PD) features a
symmetric structure, and thus a poor lateral carrier transport can be encountered, which can …

In this work, a near-ultraviolet (380 nm) double Al 0.2 Ga 0.8 N/GaN distributed Bragg
reflectors (DBRs) stack mirror was designed and fabricated. The double DBRs stack mirror …

APD based on AlN/GaN periodically stacked structure (PSS) has been proposed to obtain a
high ionization coefficient ratio of more than 100 and a record high linear-mode gain of 10 4 …

Semiconductor-based avalanche photodiodes (APDs) have the advantages of lower power
and simpler fabrication of arrays compared with photomultiplier tubes. It is critical for weak …

Inductively coupled plasma (ICP) is widely used in dry etching of III‐nitride materials,
wherein the etching parameters of GaN and AlN are very different. Herein, the ICP dry …

Avalanche photodiodes (APDs) are widely used in industry due to their internal gain, which
arises from impact ionization. Over the past 40+ years, III-V materials have been intensively …