One of the key challenges in scaling beyond 10-nm technology node is device-to-device
variation. Variation in device performance, mainly threshold voltage, VT, inhibits V CC …

III–V n-channel MOSFETs based on In x Ga 1− x As are evaluated for low-power (LP)
technology at a sub-10-nm technology node. Aggressive design rules are followed, while …

We experimentally demonstrate In x Ga 1-x A s FinFET devices with varying indium
composition and quantum confinement effect. While increasing indium content enhances …

The detailed numerical analysis is performed to study and evaluate the impact of Indium (In)
concentrations of the Indium gallium arsenide (InGaAs) channel on different device …

In this letter, we present a comparative study of positive bias temperature instability (PBTI)
reliability in In x Ga 1-x As FinFET with varying Indium (x= 0.53, 0.70) percentage and …

The downscaling of transistors being the biggest challenge in terms of gate length in
nanometer scale faces hindrances due to short channel effects and gate leakage current …

With transistor technology close to its limits for power constrained scaling and the
simultaneous emergence of mobile devices as the dominant driver for new scaling, a …

The power constrained scaling of conventional Silicon Metal-Oxide-Semiconductor Field
Effect Transistors (MOSFETs) below the 90nm technology node has led to innovations such …

Conventional MOSFET structures are reaching scaling limits and Short-Channel Effects
(SCEs) have become most important issue for device performance. With the reduction in …

One of the key challenges in scaling beyond 10nm technology node is device-to-device
variation. Variation in device performance, mainly threshold voltage (VT) inhibits supply …