2D periodic structures patterned on 3D surfaces by interference lithography for SERS

I Lettrichova, A Laurencikova, D Pudis, J Novak… - Applied Surface …, 2018 - Elsevier
This contribution brings novel concept of Ag islands formation in 2D periodic arrangement
with square symmetry on special 3D surfaces–gallium phosphide (GaP) nanocones, for …

[PDF][PDF] The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N Plasma

R Andok, A Benčurová, P Nemec… - Journal of Electrical …, 2013 - sciendo.com
In this article we describe the electron-beam direct-write (EBDW) lithography process for the
AZ 5214E photoresist which is, besides its sensitivity to UV radiation, sensitive also to …

Technology and properties of a vector hall sensor

D Gregušová, P Eliáš, Z Oszi, R Kúdela, J Šoltýs… - Microelectronics …, 2006 - Elsevier
Symmetrical four-sided∼ 12-μm-high pyramids with 30°-tilted sides were revealed by the
etching of semi-insulating (100) GaAs substrates in 1H3PO4:× H2O2: 8H2O at∼ 25° C via …

On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography

D Gregušová, J Martaus, J Fedor, R Kúdela, I Kostič… - Ultramicroscopy, 2009 - Elsevier
We developed a technology of sub-micrometer Hall probes for future application in scanning
hall probe microscopy (SHPM) and magnetic force microscopy (MFM). First, the Hall probes …

New approach to local anodic oxidation of semiconductor heterostructures

J Martaus, D Gregušová, V Cambel, R Kúdela, J Šoltýs - Ultramicroscopy, 2008 - Elsevier
We have experimentally explored a new approach to local anodic oxidation (LAO) of a
semiconductor heterostructures by means of atomic force microscopy (AFM). We have …

Standard AZ 5214E photoresist in laser interference and EBDW lithographies

J Škriniarová, R Andok, D Pudiš, A Benčurová… - Vacuum, 2015 - Elsevier
In this paper examples of the applicability of the standard AZ 5214E photoresist are shown.
The resist is besides its sensitivity to UV radiation sensitive also to e-beam exposure. The …

Conformal, planarizing and bridging AZ5214-E layers deposited by a 'draping'technique on non-planar III–V substrates

P Eliáš, P Štrichovanec, I Kostič… - … of Micromechanics and …, 2006 - iopscience.iop.org
A draping technique was tested for the deposition of positive-tone AZ5214-E photo-resist
layers on non-planar (1 0 0)-oriented III–V substrates, which had a variety of three …

GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs

D Gregušová, R Kúdela, P Eliáš, J Šoltýs… - Journal of …, 2010 - iopscience.iop.org
We report on the design, fabrication and initial mechanical testing of cantilevers with tips
based on a GaAs/In 0.485 Ga 0.515 P/AlAs heterostructure grown by metal organic chemical …

Deposition of AZ5214-E Layers on Non-planar Substrates with a" Draping" Technique

P Elias, D Gregusova, P Strichovanec… - 2006 International …, 2006 - ieeexplore.ieee.org
A draping technique was tested to deposit AZ5214-E resist on non-planar (100)-oriented III-
V substrates that contained various three-dimensional topographies. In each draping …

Cantilever sensor for study of magnetic microstructures

K Secianska, J Soltys, J Tóbik, J Dérer, V Cambel - 2015 - inis.iaea.org
Micro-electro-mechanical systems (MEMS) have been attracting attention for research in
recent years, and nowadays play important roles as key devices in various systems. MEMS …