The main issues and areas of application of photothermal and optoacoustic spectroscopy
are reviewed. Progress in innovative techniques in the most actively developing areas is …

Optical transmission measurements were performed on high quality bulk gallium nitride
(GaN) crystals grown by sodium flux, hydride vapor phase epitaxy, and the ammonothermal …

We demonstrate an InAlN/GaN-on-Si high electron mobility transistor based UV detector
with a photo-to-dark current ratio of> 10 7. The Ti/Al/Ni/Au metal stack was evaporated and …

III-nitride-based microdisk lasers on Si offer the potential in large-scale monolithic Si-based
photonic integrated circuits. Here, we demonstrate a new approach to fabricating III-nitride …

Nanocrystalline cadmium selenide (nc-CdSe) thin films have been prepared by thermal
evaporation using the inert gas condensation (IGC) technique. Transmission electron …

提出了一种新的Si 衬底上GaN 微盘谐振腔的制备方式, 避免了传统Si 基GaN
器件中晶体质量较差以及外延层较厚对器件性能的影响. 本工作中GaN 的外延生长使用蓝宝石 …

Рассмотрены основные задачи и области применения фототермической и
оптоакустической спектроскопии. Обсуждаются направления развития новых методов в …

Boron-doped a-Si: H thin films were deposited by ion beam assisted magnetron sputtering
under different assisted argon ion beam energies, and the changes of structural and …

Abstract Nonpolar Si-doped AlGaN with high electron concentration (EC) and superior
surface morphology (SM) layers were successfully grown on r-plane sapphire substrates for …

This study distinguishes itself by conducting a comparative analysis of GaN's optical
characteristics across different dimensions, namely 0D, 1D, 2D and 3D. The primary …