Scalable pulsed laser deposition of transparent rear electrode for perovskite solar cells

Y Smirnov, L Schmengler, R Kuik… - Advanced Materials …, 2021 - Wiley Online Library
Sputtered transparent conducting oxides (TCOs) are widely accepted transparent electrodes
for several types of high‐efficiency solar cells. However, the different sputtering yield of …

[HTML][HTML] Single-stage fabrication of buffer and window layers of CIGS thin-film solar cells using pulsed laser deposition

E Kyriakides, C Nicolaou, PS Ioannou, P Papagiorgis… - Solar Energy, 2024 - Elsevier
Photovoltaic devices based on Cu (In, Ga) Se 2 (CIGS) are showing great promise as
sources of clean and renewable energy production in the global efforts to reverse climate …

Growth and characterizations of dual ion beam sputtered CIGS thin films for photovoltaic applications

V Awasthi, SK Pandey, SK Pandey, S Verma… - Journal of Materials …, 2014 - Springer
The growth of CIGS thin films on soda-lime glass substrates at different substrate
temperatures by dual ion beam sputtering system in a single-step route from a single …

Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition

SC Chen, DH Hsieh, H Jiang, YK Liao, FI Lai… - Nanoscale research …, 2014 - Springer
In this work, CuIn 1-x Ga x Se 2 (CIGS) thin films were prepared by nanosecond (ns)-and
femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth …

Characteristics of Cu2ZnSnSe4 and Cu2ZnSn (Se, S) 4 absorber thin films prepared by post selenization and sequential sulfurization of co-evaporated Cu–Zn–Sn …

SM Lee, YS Cho - Journal of alloys and compounds, 2013 - Elsevier
Abstract Cu 2 ZnSnSe 4 and Cu 2 ZnSn (S, Se) 4 absorber films processed from co-
evaporated Cu–Zn–Sn precursor films by post selenization and sequential sulfurization …

Some physical parameters of CuInGaS2 thin films deposited by spray pyrolysis for solar cells

A Kotbi, B Hartiti, S Fadili, A Ridah, P Thevenin - Applied Physics A, 2017 - Springer
Abstract Copper–indium–gallium–disulphide (CuInGaS 2) is a promising absorber material
for thin film photovoltaic. In this paper, CuInGaS 2 (CIGS) thin films have been prepared by …

Study on the effects of different sulfur vaporization temperature on the properties of CuInS2 thin films

SW Shin, JH Han, JY Lee, YC Park, GL Agawane… - Applied surface …, 2013 - Elsevier
CuInS2 (CIS) absorber thin films were prepared by sulfurization of In/Cu metallic stacked
precursor. The precursor thin films were sulfurized using a commercial furnace system in the …

The effects of pulse repetition rate on the structural, optical, and electrical properties of CIGS films grown by pulsed laser deposition

CC Chen, X Qi, WC Chang, MG Tsai, IG Chen… - Applied Surface …, 2015 - Elsevier
Abstract Well crystallized CuIn 1− x Ga x Se 2 (CIGS, x= 0.22–0.26) films were deposited at
the temperatures below 300° C by pulsed laser deposition. Increasing pulse repetition rate …

Improvement in the electronic quality of pulsed laser deposited CuIn0. 7Ga0. 3Se2 thin films via post-deposition elemental sulfur annealing process

M Beres, KM Yu, J Syzdek, SS Mao - Thin Solid Films, 2016 - Elsevier
Abstract We synthesized CuIn 0.7 Ga 0.3 Se 2 thin films on soda lime glass substrates using
pulsed laser deposition and post-annealing under different conditions. Increasing substrate …

Influence of process parameters on the properties of pulsed laser deposited CuIn0. 7Ga0. 3Se2 thin films

C Nicolaou, A Zacharia, G Itskos, J Giapintzakis - Solar Energy, 2018 - Elsevier
This work reports on the influence of pulsed laser deposition growth parameters on the
properties of CuIn 0.7 Ga 0.3 Se 2 thin films. Polycrystalline CuIn 0.7 Ga 0.3 Se 2 thin films …