Ion migration as well as electron transfer and coupling in resistive switching materials
endow memristors with a physically tunable conductance to resemble synapses, neurons …

Memristors, promising nanoelectronic devices with in-memory resistive switching behavior
that is assembled with a physically integrated core processing unit (CPU) and memory unit …

Since the beginning of the 21st century, there is no doubt that the importance of artificial
intelligence has been highlighted in many fields, among which the memristor-based artificial …

High-entropy perovskite oxides in (Bi 0.4 Na 0.2 K 0.2 Ba 0.2) TiO 3-Sr (Mg 1/3 Nb 2/3) O 3
system were designed and prepared for dielectric energy storage. The effects of composition …

This article describes the characterization (structural, topological, dielectric, and electrical
properties) of a lead-free complex perovskite Ca3Bi2WO9 (CBWO) prepared by a solid-state …

The structural, electronic, optical and mechanical properties for oxide-based cubic
perovskites ABO 3 (A​=​ Nd, Cu and B= Sc, Sn) were investigated employing density …

Resistive random access memory (ReRAM) based on a resistive switching (RS) effect is a
new type of non-volatile memory device that stores information based on the reversible …

In the high-tech and intelligent era of the 21st century, as one of the important electronic
devices, wearable electronic products can effectively improve work efficiency and quality of …

The booming development of artificial intelligence (AI) requires faster physical processing
units as well as more efficient algorithms. Recently, reservoir computing (RC) has emerged …

Recently, high‐entropy perovskite oxides (HEPOs) have received increasing interest for
energy storage applications owing to their unique structure, huge composition space, and …