We present an overview of solid-state integrated circuit amplifiers approaching terahertz
frequencies based on the latest device technologies which have emerged in the past …

In this paper, we report state-of-the-art high frequency performance of GaN-based high
electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative …

This letter reports record RF performance of deeply scaled depletion-mode GaN-high-
electron-mobility transistors (GaN-HEMTs). Based on double heterojunction AlN/GaN/AlGaN …

We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs)
with a record current gain cutoff frequency (f_T) of 370 GHz. The HEMT without back barrier …

The gate leakage mechanisms in AlInN/GaN and AlGaN/GaN high electron mobility
transistors (HEMTs) are compared using temperature-dependent gate current-voltage (I GV …

This letter reports lattice-matched In 0.17 Al 0.83 N/GaN high-electron-mobility transistors on
a SiC substrate with a record current gain cutoff frequency (f T) of 300 GHz. To suppress the …

In evaluating GaN high-electron mobility transistors (HEMTs) for high-power applications, it
is crucial to consider the device-level breakdown characteristics. This letter replaces the …

GaN integrated circuit technologies have dramatically progressed over the recent years. The
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …

We report on DC and RF measurement results of AlScN/GaN high electron mobility
transistors (HEMTs) grown by metal-organic chemical vapor deposition (MOCVD) …

We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical
characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm …