The fundamentals and applications of ferroelectric HfO2
U Schroeder, MH Park, T Mikolajick… - Nature Reviews …, 2022 - nature.com
Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …
have attracted much interest from the ferroelectric materials and devices community …
Ferroelectric field-effect transistors based on HfO2: a review
In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
Review and perspective on ferroelectric HfO2-based thin films for memory applications
The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted
increasing interest since 2011. They have various advantages such as Si-based …
increasing interest since 2011. They have various advantages such as Si-based …
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 …
K Toprasertpong, K Tahara, Y Hikosaka… - … Applied Materials & …, 2022 - ACS Publications
The comparatively high coercive field in Hf0. 5Zr0. 5O2 (HZO) and other HfO2-based
ferroelectric thin films leads to two critical challenges for their application in embedded …
ferroelectric thin films leads to two critical challenges for their application in embedded …
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …
The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors
Ferroelectric hafnium‐zirconium oxide is one of the most relevant CMOS‐compatible
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Stabilizing the ferroelectric phase in doped hafnium oxide
M Hoffmann, U Schroeder, T Schenk… - Journal of Applied …, 2015 - pubs.aip.org
The ferroelectric properties and crystal structure of doped HfO 2 thin films were investigated
for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric …
for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric …
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: A comparison of model and experiment
The unexpected ferroelectric properties of nanoscale hafnia-zirconia are considered to be
promising for a wealth of applications including ferroelectric memory, field effect transistors …
promising for a wealth of applications including ferroelectric memory, field effect transistors …
Evolution of phases and ferroelectric properties of thin Hf0. 5Zr0. 5O2 films according to the thickness and annealing temperature
The effects of annealing temperature (T anneal) and film thickness (tf) on the crystal structure
and ferroelectric properties of Hf 0.5 Zr 0.5 O 2 films were examined. The Hf 0.5 Zr 0.5 O 2 …
and ferroelectric properties of Hf 0.5 Zr 0.5 O 2 films were examined. The Hf 0.5 Zr 0.5 O 2 …