Today's power grids are facing tremendous challenges because of the ever-increasing
power demand, system complexity, infrastructure cost, knowledge base, and policy and …

Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high
electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor …

Silicon-carbide (SiC) devices are receiving popularity for high-power converter systems in
aircraft due to many advantages over silicon counterparts. However, the electromagnetic …

Recently, omnidirectional wireless power transfer (WPT) has gained extensive attention
globally. However, it is difficult to integrate such system with common home furniture for its …

Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …

Application of wide bandgap power devices enables the power electronics system to
achieve higher efficiency, improved power density and reduced weight. Wide range LLC …

Nanosecond output pulse and high efficiency are achieved in high-voltage pulsed power
supplies (HVPPSs) by applying silicon carbide (SiC) metal-oxide-semiconductor field-effect …

With the development of electric transportation, resonant converters are widely used.
However, the increased power and frequency make it more difficult to design the magnetics …

Parallel-connected power device is an extensively applied solution in the industry to
increase the current rating of the converter system. However, due to the undesired printed …

The failure caused by cumulative fatigue damage due to cyclical thermal stress is the
dominant failure mode of power semiconductor devices, and it poses reliability concerns. In …