A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics
Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
Unveiling the potential of Ti3C2Tx MXene for gas sensing: recent developments and future perspectives
Ti3C2Tx MXene, a two-dimensional transition metal carbide, has garnered significant
attention as a promising material for gas sensing applications due to its exceptional …
attention as a promising material for gas sensing applications due to its exceptional …
Enhanced sub-band gap photosensitivity by an asymmetric source–drain electrode low operating voltage oxide transistor
The electrical characteristics of a thin film transistor (TFT) can be tuned by using an
asymmetric work function source–drain (S–D) electrode. However, to realize the effect of this …
asymmetric work function source–drain (S–D) electrode. However, to realize the effect of this …
Enhancement of Photosensitivity in a Low-Operating-Voltage Organic–Inorganic Bilayer Thin-Film Transistor by Using an Asymmetric Source–Drain Electrode
A solution-processed inorganic–organic bilayer semiconductor channel-based red-light-
sensitive thin-film transistor (TFT) has been fabricated by using an ion-conducting Li–Al2O3 …
sensitive thin-film transistor (TFT) has been fabricated by using an ion-conducting Li–Al2O3 …
Selective near-infrared (NIR) photodetectors fabricated with colloidal CdS: Co quantum dots
Herein, cobalt-doped cadmium sulphide CdS (CdS: Co) quantum dots (QDs) were
synthesized by an organometallic synthesis route using different doping concentrations of …
synthesized by an organometallic synthesis route using different doping concentrations of …
Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn2O3 Gate Interface
A solution-processed high-performance subvolt (< 1 V) tin oxide (SnO2) thin film transistor
(TFT) has been fabricated onto an ion-conducting Li–Al2O3 gate dielectric by utilizing a high …
(TFT) has been fabricated onto an ion-conducting Li–Al2O3 gate dielectric by utilizing a high …
High-Performance Low-Voltage Thin-Film Transistors: Experimental and Simulation Validation of Atmospheric Pressure Plasma-Assisted Li5AlO4 Metal Oxide …
Metal oxide materials processed using solution methods have garnered significant attention
due to their ability to efficiently and affordably create transparent insulating layers or active …
due to their ability to efficiently and affordably create transparent insulating layers or active …
Ultra-Low Voltage Metal Oxide Thin Film Transistor by Low-Temperature Annealed Solution Processed LiAlO2 Gate Dielectric
Low surface-roughness and high-capacitance ion-conducting LiAlO 2 gate dielectric thin film
has been fabricated by sol–gel technique to develop ultra-low voltage (≤ 1.0 V) indium-zinc …
has been fabricated by sol–gel technique to develop ultra-low voltage (≤ 1.0 V) indium-zinc …
Role of Electron Donation of TiO2 Gate Interface for Developing Solution-Processed High-Performance One-Volt Metal-Oxide Thin-Film Transistor Using Ion …
High-performance solution-processed one-volt metal-oxide thin-film transistor (TFT) has
been fabricated onto highly p-doped silicon (p++-Si) substrate with sol–gel-derived ion …
been fabricated onto highly p-doped silicon (p++-Si) substrate with sol–gel-derived ion …
Solution processed low operating voltage SnO2 thin film transistor by using Li2SnO3/TiO2 stacked gate dielectric
A thin layer of sol–gel derived lithium stannate (Li 2 SnO 3) was deposited by a spin coating
method that shows high areal capacitance with low DC conductivity which originated due to …
method that shows high areal capacitance with low DC conductivity which originated due to …