This review focuses on the emerging field of core–multishell (CMS) semiconductor
nanowires (NWs). In these kinds of wires, a NW grown vertically on a substrate acts as a …

Coaxial GaInN/GaN multiple-quantum-shells (MQSs) nanowires (NWs) were grown on an n-
type GaN/sapphire template employing selective growth by metal–organic chemical vapour …

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual
GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual …

Tunable emission wavelengths from 415 nm to 600 nm were demonstrated in coaxial
GaInN/GaN multiple quantum shells (MQS) grown on three-dimensional nanostructures …

High crystalline quality coaxial GaInN/GaN multiple quantum shells (MQSs) grown on
dislocation-free nanowires are highly in demand for efficient white-/micro-light-emitting …

To light emitting diodes (LEDs), solving the common non-uniform current injection and
efficiency degradation issues in (0001) plane micro-LED is essential. Herein, we …

Here, we systematically investigated the growth conditions of an n-GaN cap layer for
nanowire-based light emitters with a tunnel junction. Selective-area growth of multiple …

The white light-emitting diodes (LEDs), a kind of representative multiband light emitters,
which are generally manufactured by coating phosphor with InGaN-based blue LED chips …

Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were
fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p …

Metal organic vapor-phase epitaxy of GaN shells on N-and Ga-polar nanowires on AlN/Si
(111) templates has been studied in detail. A polarity-dependent epitaxial optimization of …