We investigated the doping effect of bulky organic cations with ethylenediammonium
diiodide (EDAI2) and butylammonium iodide (BAI) as additives to passivate surface defects …

A set of N-polar InN epilayers has been grown at different temperatures by plasma–assisted
molecular beam epitaxy (PA-MBE) on GaN/AlN/Al 2 O 3 (0001) templates. The purpose is to …

Stretchable photosensors, which operate in the wavelength window of 1.3 μm, were
fabricated with InN nanowires (NWs) and graphene to serve as a light-absorbing medium …

Understanding the effect of the intrinsic properties of monolayer MoS2 (1L-MoS2) on the
photoluminescence quantum yield (QY) is indispensable before seeking surface treatments …

We studied the role of biaxial compressive strain in laser-induced anharmonicity effects of
mono-and bilayer MoS 2 grown by chemical vapor deposition. With the increased laser …

We report the first demonstration of flexible photodetectors, operating at the wavelength
window of 1.3 μm, fabricated with InN nanowires (NWs) and graphene on an overhead …

High quality InN nanoparticles are grown using an atmospheric chemical vapour deposition
technique via a self-seeded catalytic approach in the temperature range of 580–650° C. In …

Structural and electronic properties of bulk Cu 3 N and monolayer Cu 2 N under ab-plane
strain have been evaluated from first principles. Furthermore, the electronic structure of a …

Indium nitride (InN) is much more difficult to prepare than other group III nitrides for its low
thermal stability. Here, InN nanoplates are prepared by using In2O3, NaNH2 and sulfur as …

InN can form ternary alloys with Ga or Al, which increases the versatility of group-III nitride
optoelectronic devices. However, more controllable InN chemical vapor deposition (CVD) …