Zirconium oxide and zirconium-rich Zr x Hf1–x O2 thin films have attracted attention owing to
their switching stability and significant promise for commercial applications such as high …

Ferroelectric materials have been widely researched for applications in memory and energy
storage. Among these materials and benefiting from their excellent chemical compatibility …

The mechanism of nanoscopic domain switching in ferroelectric hafnium oxide and its
implications for antiferroelectric-like behavior as well as for the wake-up effect is still widely …

To describe charge-polarization coupling in the nanostructure formed by a thin Hf x Zr 1− x O
2 film with single-layer graphene as the top electrode, we develop the “effective” Landau …

While ferroelectric HfO2 shows promise for use in memory technologies, limited endurance
is one factor that challenges its widespread application. Herein, endurance is investigated …

The discovery of ferroelectricity in hafnia based thin films has catalyzed significant research
focused on understanding the ferroelectric property origins and means to increase stability …

Ferroelectric polycrystalline hafnium oxide films hold great promise for the electronics
industry, though an understanding of ferroelectricity in this unconventional material is still …

This study investigates the effects of field-cycling on the critical electric fields (Et→ PO and
EPO→ t) of the field-induced ferroelectric (FFE) effect in atomic layer deposited ZrO2 thin …

Biaxial stress is identified to play an important role in the polar orthorhombic phase stability
in hafnium oxide‐based ferroelectric thin films. However, the stress state during various …

Oxygen diffusion coefficients in the metastable ferroelectric phase of polycrystalline hafnium
zirconium oxide (HZO) thin films have been quantified using 18 O tracers and time-of-flight …