A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

The formation and detection techniques of oxygen vacancies in titanium oxide-based nanostructures

A Sarkar, GG Khan - Nanoscale, 2019 - pubs.rsc.org
TiO2 and other titanium oxide-based nanomaterials have drawn immense attention from
researchers in different scientific domains due to their fascinating multifunctional properties …

Emerging iontronic neural devices for neuromorphic sensory computing

S Dai, X Liu, Y Liu, Y Xu, J Zhang, Y Wu… - Advanced …, 2023 - Wiley Online Library
Living organisms have a very mysterious and powerful sensory computing system based on
ion activity. Interestingly, studies on iontronic devices in the past few years have proposed a …

Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiOx Modulated by Moisture

G Zhou, S Duan, P Li, B Sun, B Wu… - Advanced Electronic …, 2018 - Wiley Online Library
Coexistence of negative differential resistance (NDR) and resistive switching (RS) memory
is observed using a Ag| TiOx| F‐doped‐SnO2 memory cell at room temperature. Unlike other …

Imitating the brain with neurocomputer a “new” way towards artificial general intelligence

TJ Huang - International Journal of Automation and Computing, 2017 - Springer
To achieve the artificial general intelligence (AGI), imitate the intelligence? or imitate the
brain? This is the question! Most artificial intelligence (AI) approaches set the understanding …

Charge Transfer Characterization of ALD-Grown TiO2 Protective Layers in Silicon Photocathodes

C Ros, T Andreu, MD Hernández-Alonso… - … applied materials & …, 2017 - ACS Publications
A critical parameter for the implementation of standard high-efficiency photovoltaic absorber
materials for photoelectrochemical water splitting is its proper protection from chemical …

Resistive switching in microscale anodic titanium dioxide-based memristors

V Aglieri, A Zaffora, G Lullo, M Santamaria… - Superlattices and …, 2018 - Elsevier
The potentiality of anodic TiO 2 as an oxide material for the realization of resistive switching
memory cells has been explored in this paper. Cu/anodic-TiO 2/Ti memristors of different …

Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2− x-based memory devices through experiments and simulations

P Bousoulas, I Giannopoulos, P Asenov… - Journal of Applied …, 2017 - pubs.aip.org
Although multilevel capability is probably the most important property of resistive random
access memory (RRAM) technology, it is vulnerable to reliability issues due to the stochastic …

Metastable oxygen vacancy ordering state and improved memristive behavior in TiO2 crystals

T Li, F Hong, K Yang, B Yue, N Tamura, H Wu, Z Cheng… - Science Bulletin, 2020 - Elsevier
Oxygen vacancy is one of the pivotal factors for tuning/creating various oxide properties.
Understanding the behavior of oxygen vacancies is of paramount importance. In this study …

Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2− x/ZrO2 bilayer memory

R Huang, X Yan, KA Morgan… - Journal of Physics D …, 2017 - iopscience.iop.org
We report here a ZrO 2− x/ZrO 2-based bilayer resistive switching memory with unique
properties that enables the selection of the switching mode by applying different …