Investigation of double-emitter reduced-surface-field horizontal current bipolar transistor breakdown mechanisms
Breakdown behavior of double-emitter reduced-surface-field horizontal current bipolar
transistor is extensively analyzed by measurements and 3D device simulations. By the …
transistor is extensively analyzed by measurements and 3D device simulations. By the …
[图书][B] A highly efficient 40-Gbps modulator driver circuit for Silicon photonic optical communication
A Fatemi - 2019 - search.proquest.com
In recent years, optical communication links using pluggable optical transceivers have
become widespread in data centers, offering high communication bandwidth and low power …
become widespread in data centers, offering high communication bandwidth and low power …
Semiconductor device comprising a PN junction diode
VT Dinh, M Vroubel, PA Grudowski - US Patent 10,580,906, 2020 - Google Patents
Aspects of the present disclosure are set out in the accompanying independent and
dependent claims. Combinations of features from the dependent claims may be combined …
dependent claims. Combinations of features from the dependent claims may be combined …
Novel npn bipolar transistor with high gain, high Early voltage, and high BVceo in an advanced SmartMOS technology
X Lin, R Zhu - 2016 IEEE Bipolar/BiCMOS Circuits and …, 2016 - ieeexplore.ieee.org
A high performance npn bipolar transistor has been demonstrated in a 0.13 μm SOI
SmartMOS™ technology. This novel bipolar transistor consists of a shallow emitter confined …
SmartMOS™ technology. This novel bipolar transistor consists of a shallow emitter confined …