Nano-scale MOSFET device modelling with quantum mechanical effects
E Cumberbatch, S Uno, H Abebe - European Journal of Applied …, 2006 - cambridge.org
The continuing down-scaling trend of CMOS technology has brought serious deterioration in
the accuracy of the SPICE (Simulation Program with Integrated Circuit Emphasis) device …
the accuracy of the SPICE (Simulation Program with Integrated Circuit Emphasis) device …
[PDF][PDF] Quantum mechanical effects correction models for inversion charge and current-voltage (IV) characteristics of the MOSFET device
H Abebe, E Cumberbatch - Proceedings 2003 nanotechnology conference, 2003 - Citeseer
Analytic 1-D quantum mechanical effects correction formulae for the MOSFET inversion
charge and IV characteristics are derived from the density gradient (DG) model using …
charge and IV characteristics are derived from the density gradient (DG) model using …
Numerical Simulation of Bulk GaN PIN Diode with Spectral-Element Method
F Yang, C Li, Z Dai, T Zhang, H Bao… - 2022 IEEE MTT-S …, 2022 - ieeexplore.ieee.org
Due to the superior properties of bulk gallium nitride (GaN), GaN is expected to be
introduced into the PIN limiter to withstand high power microwave. To describe the …
introduced into the PIN limiter to withstand high power microwave. To describe the …
[PDF][PDF] Modeling quantum effects on MOSFET channel surface potential
H Abebe, E Cumberbatch - Proceedings 2004 International …, 2004 - researchgate.net
Quantum mechanical (QM) effects are playing a significant role in MOSFET (metal-oxide-
silicon field-effect transistor) device channel surface potential characteristics due to the ever …
silicon field-effect transistor) device channel surface potential characteristics due to the ever …
Influence of Interface Trap States and Quantum Mechanical Effects on the Drain Current of III-V Semiconductor MOSFETs
MAB Shafi, S Sutradhar, K Debnath - 2012 - 103.133.167.5
Effects of interface trap charges and quantum mechanical correction have been
incorporated into the IV characteristic of III-V semiconductor MOSFETs. MOS structures …
incorporated into the IV characteristic of III-V semiconductor MOSFETs. MOS structures …
[PDF][PDF] A Simplified Current-Voltage (IV) Characteristics Model with Quantum Mechanical Effects for n-channel MOSFET
H Abebe, V Tyree, E Cumberbatch, H Morris - researchgate.net
The CMOS (complementary-metal-oxide-silicon) scaling rules require that advanced
MOSFETs (metal-oxide-silicon field-effect transistors) be fabricated with ultra-thin gate …
MOSFETs (metal-oxide-silicon field-effect transistors) be fabricated with ultra-thin gate …
[PDF][PDF] Modeling The Current-Voltage (IV) Characteristics of The MOSFET Device With Quantum Mechanical Effects Due to Thin Oxide near
H Abebe - 2002 - researchgate.net
This introductory chapter is divided into three sections. Section 1.1 presents the main
motivation of the research and addresses current issues in semiconductor device modeling …
motivation of the research and addresses current issues in semiconductor device modeling …