Photon emission from Si p‐channel MOS field‐effect transistor (PMOSFET) having 6‐μm
effective gate length that is operated as a three‐terminal gate‐controlled light‐emitting diode …

Revised and expanded for this new edition, Smart CMOS Image Sensors and Applications,
Second Edition is the only book available devoted to smart CMOS image sensors and …

This paper studies integrated silicon light emitter implemented in standard CMOS
technologies. A new MOS-like structure utilizing deep p-well is presented, and compared …

The motivation of this study is to develop ap–n junction based light emitting device, in which
the light emission is conventionally realized using reverse current driving, by voltage driving …

Research on efficient light emission from silicon devices is moving toward leading-edge
advances in components for nano-optoelectronics and related areas. A silicon laser is being …

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-
market applications. Especially, the growing demand for sensitive biochemical sensors in …

It is shown that, by using conventional VLSI design rules and device processing, a variety of
two terminal and multiterminal integrated silicon light-emitting devices (Si-LEDs) can be …

Emission spectra of avalanching n^+ p junctions manufactured in a standard CMOS
technology with no process modifications were measured over a broad photon energy …

p+ np+ CMOS Si LED structures were modeled in order to investigate the effect of various
depletion layer profiles and defect engineering on the photonic transitions in the 1.4-2.8 eV …

A solution is presented for the fabrication of low-voltage, low-power (< 4.25 V and< 5 mW)
silicon light-emitting devices (Si-LEDs), utilizing standard very large scale integration …