AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction
This paper presents a comprehensive review of AlGaN/GaN high electron mobility transistor
failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where …
failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where …
An overview on analyses and suppression methods of trapping effects in AlGaN/GaN HEMTs
R Ye, X Cai, C Du, H Liu, Y Zhang, X Duan… - IEEE Access, 2021 - ieeexplore.ieee.org
Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …
power and high frequency applications. However, the existence of damages, defects and …
Review of bias-temperature instabilities at the III-N/dielectric interface
C Ostermaier, P Lagger, M Reiner, D Pogany - Microelectronics Reliability, 2018 - Elsevier
Two particular defects are commonly discussed at the III-N interface: the required donor
states, known to exist from the formation of the two-dimensional electron gas (2DEG) below …
states, known to exist from the formation of the two-dimensional electron gas (2DEG) below …
Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination
This paper focuses on the time-dependent breakdown of the AlGaN/GaN Schottky barrier
diodes with a gated edge termination (GET) submitted to high-voltage stress. The impact of …
diodes with a gated edge termination (GET) submitted to high-voltage stress. The impact of …
OFF-state degradation of AlGaN/GaN power HEMTs: Experimental demonstration of time-dependent drain-source breakdown
M Meneghini, G Cibin, M Bertin… - … on Electron Devices, 2014 - ieeexplore.ieee.org
This paper reports the experimental demonstration of a novel degradation mechanism of
high-power AlGaN/GaN high electron mobility transistors (HEMTs), that is, time-dependent …
high-power AlGaN/GaN high electron mobility transistors (HEMTs), that is, time-dependent …
Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs
J Mukherjee, RK Chaubey, DS Rawal… - Materials Science in …, 2022 - Elsevier
The recovery of high reverse gate leakage current in AlGaN/GaN HEMTs has been analyzed
in this study. To demonstrate the recovery after a thermal stress for large time periods (8–12 …
in this study. To demonstrate the recovery after a thermal stress for large time periods (8–12 …
Study of “Thin Buffer” GaN on SiC HEMT and Effect of Bulk Traps on it
In this work an AlGaN/GaN HEMT device with thin (200 nm) buffer structure and moderate C-
doping has been studied. DC characterization, Capacitance-Voltage (CV) measurements …
doping has been studied. DC characterization, Capacitance-Voltage (CV) measurements …
Gate technology contributions to collapse of drain current in AlGaN/GaN Schottky HEMT
T Kawanago, K Kakushima, Y Kataoka… - … on Electron Devices, 2014 - ieeexplore.ieee.org
Contributions of gate metal to electrical characteristics in AlGaN/GaN Schottky HEMT are
reported. The focus is on the collapse of drain current associated with Schottky metals. Ni …
reported. The focus is on the collapse of drain current associated with Schottky metals. Ni …
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs
M Meneghini, I Rossetto, D Bisi… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
The aim of this work is to quantitatively investigate the influence of buffer doping on the
current collapse of AlGaN/GaN HEMTs, and to analyze the contribution of trap states to the …
current collapse of AlGaN/GaN HEMTs, and to analyze the contribution of trap states to the …
Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes
J Ren, D Yan, G Yang, F Wang, S Xiao… - Journal of Applied …, 2015 - pubs.aip.org
Lattice-matched Pt/Au-In 0.17 Al 0.83 N/GaN hetreojunction Schottky diodes with circular
planar structure have been fabricated and investigated by temperature dependent electrical …
planar structure have been fabricated and investigated by temperature dependent electrical …