Giant hot electron thermalization via stacking of graphene layers
The capability of graphene to generate hot electrons is predicted to be effective in converting
low energy photons into electrical currents for the mid-infrared photodetection [1, 2] …
low energy photons into electrical currents for the mid-infrared photodetection [1, 2] …
Pristine PN junction toward atomic layer devices
In semiconductor manufacturing, PN junction is formed by introducing dopants to activate
neighboring electron and hole conductance. To avoid structural distortion and failure, it …
neighboring electron and hole conductance. To avoid structural distortion and failure, it …
InAs nanowire visible-infrared detector photoresponse engineering
This review summarizes the operational principles of Indium Arsenide (InAs) nanowire
photodetectors under different light conditions and the various approaches designed to …
photodetectors under different light conditions and the various approaches designed to …
Schottky‐Contacted High‐Performance GaSb Nanowires Photodetectors Enabled by Lead‐Free All‐Inorganic Perovskites Decoration
The surface Fermi level pinning effect promotes the formation of metal‐independent Ohmic
contacts for the high‐speed GaSb nanowires (NWs) electronic devices, however, it limits …
contacts for the high‐speed GaSb nanowires (NWs) electronic devices, however, it limits …
Gate‐Tunable van der Waals Photodiodes with an Ultrahigh Peak‐to‐Valley Current Ratio
Photodetectors and imagers based on 2D layered materials are currently subject to a rapidly
expanding application space, with an increasing demand for cost‐effective and lightweight …
expanding application space, with an increasing demand for cost‐effective and lightweight …
Small-diameter p-type SnS nanowire photodetectors and phototransistors with low-noise and high-performance
R Chen, L Li, L Jiang, X Yu, D Zhu, Y Xiong… - …, 2022 - iopscience.iop.org
P-type nanostructured photodetectors and phototransistors have been widely used in the
field of photodetection due to their excellent electrical and optoelectronic characteristics …
field of photodetection due to their excellent electrical and optoelectronic characteristics …
Nanobowls-assisted broadband absorber for unbiased Si-based infrared photodetection
Hot electrons from the nonradiative decay of surface plasmons have drawn extensive
attention due to the outstanding performance in realizing below-bandgap photodetection …
attention due to the outstanding performance in realizing below-bandgap photodetection …
Hot-carrier infrared detection in PbS with ultrafast and highly sensitive responses
S Wu, L Qin, Q Li, Z Wu, Z Nie, Y Jiang, J Wang… - Applied Physics …, 2022 - pubs.aip.org
Traditional infrared semiconductors with direct narrow bandgaps, such as HgCdTe, InGaAs,
and lead salts (PbS, PbSe, and PbTe), have been commercialized for decades in various …
and lead salts (PbS, PbSe, and PbTe), have been commercialized for decades in various …
Artificial synapse based on an InAs nanowire field-effect transistor with ferroelectric polymer P (VDF-TrFE) passivation
R Shen, Y Jiang, X Li, J Tian, S Li, T Li… - ACS Applied Electronic …, 2022 - ACS Publications
Indium arsenide (InAs) nanowire (NW) is a promising semiconductor material in modern
electronic and optoelectronic devices due to its fascinating properties such as narrow direct …
electronic and optoelectronic devices due to its fascinating properties such as narrow direct …
Trap-mode PbSe mid-infrared photodetector with decreased-temperature processing method
X Zhao, X Tang, T Li, M Chen - Infrared Physics & Technology, 2023 - Elsevier
In this paper, we investigate a trap-mode PbSe mid-infrared photodetector with decreased-
temperature processing method. Usual PbSe mid-infrared photodetectors need the …
temperature processing method. Usual PbSe mid-infrared photodetectors need the …