Metal‐organic chemical vapor deposition of oxide perovskite films: a facile route to complex functional systems

F Lo Presti, AL Pellegrino… - Advanced Materials …, 2022 - Wiley Online Library
Perovskite oxide type materials exhibit a great profusion of unique functional properties and
for this reason they have been named inorganic chameleon. Nevertheless, their actual …

First-principles investigations of electronic and optical properties of (V, P) co-doped BaHfO3 for photovoltaic and photocatalytic applications

A El Badraoui, N Tahiri, O El Bounagui… - Inorganic Chemistry …, 2024 - Elsevier
In this work, we used spin-polarized density functional theory to investigate the change of
electronic and optical properties of wide band gap barium hafnate after incorporating …

Mechanical, electronic, chemical bonding and optical properties of cubic BaHfO3: first-principles calculations

QJ Liu, ZT Liu, LP Feng, H Tian - Physica B: Condensed Matter, 2010 - Elsevier
We have performed ab-initio total energy calculations using the plane-wave ultrasoft
pseudopotential technique based on the first-principles density-functional theory (DFT) to …

Temperature Dependent Thermodynamical and Thermoelectric Behaviour of Hafnium Based Insulators: An Ab-inito Characterization

MS Arslan, M Zulfiqar, RU Hassan, A Zulfiqar… - Journal of Inorganic and …, 2024 - Springer
This study aims to conduct a comprehensive investigation into the thermodynamic and
thermoelectric potential of the (Ca, Sr, Ba) HfO 3 family. This family has been selected for …

Pressure-Induced Modifications in the Optoelectronic and Thermoelectric Properties of MgHfO3 for Renewable Energy Applications

M Rashid, F Aziz, Q Mahmood, NA Kattan… - Arabian Journal for …, 2021 - Springer
This work presents the influence of external pressure (in the range of 0 to 20 GPa) on the
optoelectronic and thermoelectric response of magnesium-based perovskites oxide (MgHfO …

First-principles study of thermodynamic stability and the electronic properties of intrinsic vacancy defects in barium hafnate

SM Alay-e-Abbas, A Shaukat - Journal of Physics: Condensed …, 2014 - iopscience.iop.org
The formation of intrinsic vacancy defects in barium hafnate, BaHfO 3 and their
corresponding electronic structures have been investigated using first-principles …

Chemical vapor deposition and characterization of high-k BaHf1− xTixO3 dielectric layers for microelectronic applications

A Abrutis, T Katkus, S Stanionyte, V Kubilius… - Journal of Vacuum …, 2011 - pubs.aip.org
Possibilities to grow high-k BaHf 1− x Ti x O 3 layers were investigated by pulsed liquid
injection metal-organic chemical vapor deposition technique. Ba (thd) 2 (thd= 2, 2, 6, 6 …

[PDF][PDF] Hafnium oxide-based dielectrics by atomic layer deposition

P King - 2013 - core.ac.uk
In 2007 there was an important change in the architecture of nanotransistors-the building
blocks of modern logic and memory devices. This change was from utilising thermally grown …

Sputter synthesis of multifunctional hafnium oxide based thin films for gate dielectric and memory applications

KC Das - 2017 - ethesis.nitrkl.ac.in
Over the past decade, tremendous research has drawn considerable attention for
incorporation of high-k dielectric materials to replace the conventional low-k dielectric …

Carrier modulation of BaSnO3 via field effect with various gate oxides and their interfaces

C Park - 2016 - s-space.snu.ac.kr
The oxide materials were generally believed as one of the most promising materials for the
electronic industry due to its exceptional novel characteristics such as high optical …