This paper is a review of the thermal stability of state-of-the-art transition metal nitride thin
films synthesized by physical vapour deposition techniques. Nitrides are successfully …

▪ Abstract The transition to copper-based interconnects for sub-quarter-micron device
technologies has generated significant challenges in the identification and development of …

The electrochemical deposition of copper (Cu) thin film on polycrystalline ruthenium (Ru)
electrode surface was investigated in a sulfuric acid plating bath. Scanning electron …

Thin films of transition metal nitrides show wide-ranging properties and have various
technological uses. The early transition metal nitrides with stoichiometry MNx (M= Ti, Zr, Hf …

Diffusion studies were carried out on physical vapor deposited Cu/Ru (∼ 20 nm)/Si samples
using secondary ion mass spectroscopy (SIMS) and transmission electron microscopy …

Thin Co (W, P) films, 100–200 nm thick, were electroless deposited on oxidized silicon
wafers using sputtered copper or cobalt as catalytic seed layers. The purpose of these films …

Tantalum nitride atomic layer deposition (ALD) was performed using sequential exposures
of (tert-butylimido) tris (diethylamido) tantalum (TBTDET) and either hydrazine or ammonia …

With the implementation of Cu interconnect technology, the conventional thin film deposition
technique including physical vapor deposition (PVD) shows its fundamental limitation with …

Low resistivity cubic-TaN thin films were grown by plasma-enhanced-atomic layer
deposition using TaCl 5 as the metal precursor and hydrogen/nitrogen plasma. The …

The development of a reliable synthetic route to produce high performance Ta3N5
photoanodes has been complicated by the large number of synthetic parameters, notably …