Material integration strategies, such as epitaxial growth, usually involve strong chemical
bonds and are typically limited to materials with strict structure matching and processing …

After a decade of intensive research on two-dimensional (2D) materials inspired by the
discovery of graphene, the field of 2D electronics has reached a stage with booming …

Our understanding of the dielectric response of interfacial water, which underlies the
solvation properties and reaction rates at aqueous interfaces, relies on the linear response …

Electron–hole pair separation and photocurrent conversion at two-dimensional (2D) and
three-dimensional (3D) hybrid interfaces are important for achieving high performance, self …

The electrical properties of multilayer MoS2/graphene heterojunction transistors are
investigated. Temperature-dependent I–V measurements indicate the concentration of …

MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The
MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different …

In graphene/semiconductor heterojunction, the statistic charge transfer between graphene
and semiconductor leads to decreased junction barrier height and limits the Fermi level …

As a typical two-dimensional (2D) atomic thin material, the massless Dirac Fermions in
graphene promise many unique physical properties, such as high carrier mobility and high …

The performance of a graphene/Ge Schottky junction near-infrared photodetector is
significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge …

We report thermoelectric transport measurements across a graphene/hexagonal boron
nitride (h-BN)/graphene heterostructure device. Using an AC lock-in technique, we are able …