Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …

A review of the basic mechanisms affecting the stability of the threshold voltage in response
to a bias-temperature stress is presented in terms of the charging and activation of near …

This work reports on three important aspects of threshold-voltage instability in SiC power
MOSFETs:(1) the threshold-voltage bias-temperature instability observed in commercial …

A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …

This work provides additional insight into the threshold-voltage instability effect generally
observed, to varying degrees, in SiC MOSFETs, and discusses the need for an improved test …

The state-of-the-art 4H-SiC MOSFETs still suffer from performance (low channel-carrier
mobility and high threshold voltage) and reliability (threshold voltage instability) issues …

We investigated the effects of the interface state density (D IT) at the interfaces between SiO
2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect …

Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs)
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …

We have studied the switching behavior of a single Co/Pt multilayer dot under the assistance
of rf fields. The switching field monotonically decreases with increasing rf frequency up to a …

We investigated the effects of D IT at the interface between SiO 2 and Si-, C-, and a-face 4H-
SiC in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) that were …