Amorphous oxide semiconductors: From fundamental properties to practical applications
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
Bidimensional Engineered Amorphous a-SnO2 Interfaces: Synthesis and Gas Sensing Response to H2S and Humidity
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and metal chalcogenides
(MCs), despite their excellent gas sensing properties, are subjected to spontaneous …
(MCs), despite their excellent gas sensing properties, are subjected to spontaneous …
High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring
The development of p-type metal-oxide semiconductors (MOSs) is of increasing interest for
applications in next-generation optoelectronic devices, display backplane, and low-power …
applications in next-generation optoelectronic devices, display backplane, and low-power …
Layered amorphous a-SnO2 gas sensors by controlled oxidation of 2D-SnSe2
Abstract 2D-layered amorphous a-SnO 2 is utilized for the first time to detect NO 2, H 2 and
NH 3 gases at 100° C operating temperature opening new perspectives for the exploitation …
NH 3 gases at 100° C operating temperature opening new perspectives for the exploitation …
The influence of water-induced crystallization on the photoelectrochemical properties of porous anodic tin oxide films
M Gurgul, K Gawlak, K Syrek, M Kozieł… - Journal of Industrial and …, 2020 - Elsevier
Nanoporous SnO x films with ultra-small channels (< 20 nm in diameter) were synthesized
by one-step anodic oxidation of Sn foil in 1 M sodium hydroxide. Then, as-prepared …
by one-step anodic oxidation of Sn foil in 1 M sodium hydroxide. Then, as-prepared …
Halogen atom-doped graphene/MoSe2 heterojunction Schottky barrier height modulation
J He, G Liu, C Zhang, G Zhang - Chinese Journal of Physics, 2023 - Elsevier
Achieving lower Schottky barrier heights in logic devices remains a formidable challenge. In
this paper, the effect of halogen atoms doping on the type and height of graphene/MoSe 2 …
this paper, the effect of halogen atoms doping on the type and height of graphene/MoSe 2 …
Analysis of the Solution-Processed a-SnOX and HfO2 Interface for Applications in Thin-Film Transistors
Indium gallium zinc oxide is an amorphous oxide semiconductor (AOS) which has been
regarded as a substitute for hydrogenated amorphous silicon. Other AOSs have been …
regarded as a substitute for hydrogenated amorphous silicon. Other AOSs have been …
Analog/RF performance analysis of a-ITZO thin film transistor
This work reports RF and analog performance analysis of an amorphous Indium Tin Zinc
Oxide thin film transistor. The various parameters affecting the performance of a-ITZO TFT …
Oxide thin film transistor. The various parameters affecting the performance of a-ITZO TFT …
Amorphous GeSnSe nanoparticles as a Li-Ion battery anode with High-Capacity and long cycle performance
A new ternary amorphous GeSnSe (GSS) nanopowder was effectively synthesized by using
ball milling under inert atmosphere. Its topographical, microstructural and elemental …
ball milling under inert atmosphere. Its topographical, microstructural and elemental …
Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits
C Avis, J Jang - Membranes, 2021 - mdpi.com
Crystalline tin oxide has been investigated for industrial applications since the 1970s.
Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and …
Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and …