In-situ hydroxyl modification of monolayer black phosphorus for stable photocatalytic carbon dioxide conversion

X Zhu, S Huang, Q Yu, Y She, J Yang, G Zhou… - Applied Catalysis B …, 2020 - Elsevier
Black phosphorus (BP) is one of the most attracting materials that has been the subject of a
theoretically predicted on photocatalytic CO 2 reduction reactions. However, due to the …

Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications

M Brehm, M Grydlik - Nanotechnology, 2017 - iopscience.iop.org
In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …

A computational framework for automation of point defect calculations

A Goyal, P Gorai, H Peng, S Lany… - Computational Materials …, 2017 - Elsevier
A complete and rigorously validated open-source Python framework to automate point
defect calculations using density functional theory has been developed. The framework …

Stability and electronic structure of two-dimensional allotropes of group-IV materials

F Matusalem, M Marques, LK Teles, F Bechstedt - Physical Review B, 2015 - APS
We study six different two-dimensional (2D) allotropes of carbon, silicon, germanium, and tin
by means of the ab initio density functional theory for the ground state and approximate …

“Stickier”-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization

J Feng, A Lotnyk, H Bryja, X Wang, M Xu… - … Applied Materials & …, 2020 - ACS Publications
Ge-Sb-Te (GST)-based phase-change memory (PCM) excels in the switching performance
but remains insufficient of the operating speed to replace cache memory (the fastest memory …

[HTML][HTML] First-principles characterization of native-defect-related optical transitions in ZnO

JL Lyons, JB Varley, D Steiauf, A Janotti… - Journal of Applied …, 2017 - pubs.aip.org
We investigate the electrical and optical properties of oxygen vacancies (VO), zinc
vacancies (V Zn), hydrogenated V Zn, and isolated dangling bonds in ZnO using hybrid …

[HTML][HTML] Surface passivation approaches for silicon, germanium, and III–V semiconductors

RJ Theeuwes, WMM Kessels, B Macco - Journal of Vacuum Science & …, 2024 - pubs.aip.org
Semiconductors are key to our modern society, enabling a myriad of fields, including
electronics, photovoltaics, and photonics. The performance of semiconductor devices can be …

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

S Prucnal, F Liu, M Voelskow, L Vines, L Rebohle… - Scientific reports, 2016 - nature.com
A key milestone for the next generation of high-performance multifunctional microelectronic
devices is the monolithic integration of high-mobility materials with Si technology. The use of …

High thermoelectric performance in polycrystalline GeSiSn ternary alloy thin films

S Maeda, T Ishiyama, T Nishida, T Ozawa… - … Applied Materials & …, 2022 - ACS Publications
Group IV materials are promising candidates for highly reliable and human-friendly thin-film
thermoelectric generators, used for micro-energy harvesting. In this study, we investigated …

Acceptor defects in polycrystalline Ge layers evaluated using linear regression analysis

T Imajo, T Ishiyama, K Nozawa, T Suemasu, K Toko - Scientific Reports, 2022 - nature.com
Polycrystalline Ge thin films have recently attracted renewed attention as a material for
various electronic and optical devices. However, the difficulty in the Fermi level control of …