In this work, we demonstrate the short-term memory effects of an Ag/SnO x/TiN memristor
device using the spontaneous reset process for a neuromorphic system. The thickness and …

An optoelectronic synaptic device based on the ITO/Zn2SnO4 (ZTO)/ITO structure is
fabricated which integrates the electronic memory and optical sensing properties along with …

The self-rectifying resistive switching (RS) characteristics of molybdenum oxide (MoO x)
semiconductors are investigated in this paper. The MoO x RS layers are deposited by radio …

As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of
connected devices, the need for processing large amounts of data in a fast and energy …

In this article, we have investigated the forming free bipolar resistive switching (RS)
phenomena of-beam evaporated amorphous tin-oxide-based RS device with copper as a …

Spinel Co3O4 thin films were synthesized using a sol–gel technique to study the annealing
atmosphere effect on resistive switching (RS) and magnetic modulation properties …

Abstract Bilayer of NiO x/TiO 2 thin film spin-coated and sputtering-deposited on the fluorine
doped tin oxide (FTO) substrate is employed to develop a resistive random access memory …

In this article, we have investigated the diffusivity of platinum (Pt) and silver (Ag) metal into
an E-beam evaporated amorphous tin-oxide (SnO2) insulating layer and studied resistive …

This brief investigated bipolar resistive switching (RS) characteristic of a top-electrode-free
sol-gel SnOx resistive memory, which was fabricated at a low temperature of 120° C. The RS …

Cerium oxide-based memristors have been extensively studied because of their
compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is …