We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

We compare basic physical parameters of Al/sub 0.2/Ga/sub 0.8/N-GaN quantum well with
In/sub 0.17/Al/sub 0.83/N/GaN and In/sub 0.17/Al/sub 0.83/N/In/sub 0.10/Ga/sub 0.90/N …

We report on the current properties of Al 1− x In x N (x≈ 0.18) layers lattice-matched (LM) to
GaN and their specific use to realize nearly strain-free structures for photonic and electronic …

Reflecting changes in the field in the ten years since the publication of the first edition, The
Handbook of Photonics, Second Edition explores recent advances that have affected this …

We present parameter-free calculations of electronic properties of InGaN, InAlN, and AlGaN
alloys. The calculations are based on a generalized quasichemical approach, to account for …

III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …

First-principles pseudopotential plane-wave calculations are used to investigate the
electronic, structural, and thermodynamic properties of cubic nitride alloys In x Ga 1− x N …

The optical properties and electronic structure of molecular-beam epitaxy grown InN and In-
rich group III-nitride alloy films are studied. The band gap of InN is determined to be 0.7 eV …