Solid oxide fuel cells (SOFCs) are a key component of the future energy landscape.
Although there is considerable research on the physical properties and technology of classic …

Silicon is the mainstream material for many nanoelectronic and photovoltaic applications.
The understanding of oxygen related defects at a fundamental level is essential to further …

Understanding crystal characteristics down to the atomistic level increasingly emerges as a
crucial insight for creating solid state platforms for qubits with reproducible and …

This study is the most comprehensive test to date aiming at defining the optimal number of
fitting parameters for a reliable mathematical description of the diffusion behavior of a binary …

Diffusion of the p-type dopant Mg in GaN and Al x Ga 1− x N which is accompanied by
segregation and affected by transient effects in metal-organic vapor-phase epitaxy reactors …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

We present a detailed study regarding the bandgap dependence on diameter and
composition of spherical Ge-rich Ge x Si1− x nanocrystals (NCs). For this, we conducted a …

An A-center is an oxygen interstitial atom near a lattice vacancy and is one of the most
common impurity-defect pairs in Czochralski-grown silicon crystals. In the present study …

Int. Cl. A method includes forming isolation regions in a semicon HOIL 2L/76(2006.01)
ductor Substrate, forming a first semiconductor strip between HOIL 21/02(2006.01) opposite …

This review primarily deals with the compensation of 'matrix effect'in secondary ion mass
spectrometry (SIMS) for direct quantitative analysis of materials using MCs+-SIMS approach …