Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters
MA Khan, JP Bermundo, Y Ishikawa, H Ikenoue… - …, 2020 - iopscience.iop.org
Mg-doped p-type semiconducting aluminium-gallium-nitride hole source layer (p-AlGaN
HSL) materials are quite promising as a source of hole'p'carriers for the ultraviolet-B (UVB) …
HSL) materials are quite promising as a source of hole'p'carriers for the ultraviolet-B (UVB) …
Oxygen-induced high diffusion rate of magnesium dopants in GaN/AlGaN based UV LED heterostructures
Further development of GaN/AlGaN based optoelectronic devices requires optimization of
the p-type material growth process. In particular, uncontrolled diffusion of Mg dopants may …
the p-type material growth process. In particular, uncontrolled diffusion of Mg dopants may …
n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon
A Kakanakova-Georgieva, SL Sahonta… - Journal of Materials …, 2016 - pubs.rsc.org
High-Al-content AlxGa1− xN layers, x∼ 0.72, have been grown by metal organic chemical
vapour deposition (MOCVD) at a temperature ranging from 1000 to 1100° C, together with …
vapour deposition (MOCVD) at a temperature ranging from 1000 to 1100° C, together with …