Uncovering recent progress in nanostructured light-emitters for information and communication technologies

F Grillot, J Duan, B Dong, H Huang - Light: Science & Applications, 2021 - nature.com
Semiconductor nanostructures with low dimensionality like quantum dots and quantum
dashes are one of the best attractive and heuristic solutions for achieving high performance …

Physics and applications of quantum dot lasers for silicon photonics

F Grillot, JC Norman, J Duan, Z Zhang, B Dong… - …, 2020 - degruyter.com
Photonic integrated circuits (PICs) have enabled numerous high performance, energy
efficient, and compact technologies for optical communications, sensing, and metrology …

Active mid-infrared ring resonators

D Kazakov, TP Letsou, M Beiser, Y Zhi… - Nature …, 2024 - nature.com
High-quality optical ring resonators can confine light in a small volume and store it for
millions of roundtrips. They have enabled the dramatic size reduction from laboratory scale …

[PDF][PDF] Ultra-high spectral purity laser derived from weak external distributed perturbation

L Dang, L Huang, L Shi, F Li, G Yin, L Gao… - Opto-Electronic …, 2023 - researching.cn
Ultra-high spectral purity lasers are of considerable research interests in numerous fields
such as coherent optical communication, microwave photonics, distributed optical fiber …

High‐Power, Narrow‐Linewidth, and Low‐Noise Quantum Dot Distributed Feedback Lasers

S Wang, ZR Lv, QL Yang, SL Wang… - Laser & Photonics …, 2023 - Wiley Online Library
Single‐frequency semiconductor lasers represent a critical role in optical communications,
light detection and ranging systems, photonics integrated circuits, etc. Here, combining atom …

Intensity noise reduction in quantum dot comb laser by lower external carrier fluctuations

W Wang, S Ding, Z Wang, F He, S Zhao, T Wang… - Optics Letters, 2024 - opg.optica.org
This work investigates the impact of carrier noise induced by an external current source on
the linewidth enhancement factor (LEF) and relative intensity noise (RIN) of a 100 GHz …

Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon

J Duan, Y Zhou, B Dong, H Huang, JC Norman… - Optics Letters, 2020 - opg.optica.org
This work experimentally investigates the impact of p-doping on the relative intensity noise
(RIN) properties and subsequently on the modulation properties of semiconductor quantum …

Recent developments of quantum dot materials for high speed and ultrafast lasers

Z Yao, C Jiang, X Wang, H Chen, H Wang, L Qin… - Nanomaterials, 2022 - mdpi.com
Owing to their high integration and functionality, nanometer-scale optoelectronic devices
based on III-V semiconductor materials are emerging as an enabling technology for fiber …

Dynamic and nonlinear properties of epitaxial quantum-dot lasers on silicon operating under long-and short-cavity feedback conditions for photonic integrated circuits

B Dong, JD Chen, FY Lin, JC Norman, JE Bowers… - Physical Review A, 2021 - APS
This work reports on an investigation of the dynamics of 1.3 μ m epitaxial quantum dot (QD)
lasers on silicon subject to delayed optical feedback. Operating the device under different …

Dynamic performance and reflection sensitivity of quantum dot distributed feedback lasers with large optical mismatch

B Dong, J Duan, H Huang, JC Norman, K Nishi… - Photonics …, 2021 - opg.optica.org
This work reports on a high-efficiency InAs/GaAs distributed feedback quantum dot laser.
The large optical wavelength detuning at room temperature between the lasing peak and …