Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …

For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …

Two-dimensional (2D) materials with unique band structures have shown great potential for
modern electronics and optoelectronics. The junction composed of metals and 2D van der …

The vertical electronic and optoelectronic devices based on 2D materials have shown great
advantages over lateral devices, such as higher current density, faster switch speed, and …

Localised emission from defect states in monolayer transition metal dichalcogenides is of
great interest for optoelectronic and quantum device applications. Recent progress towards …

The determination of energy levels at heterointerfaces is important for understanding charge
transport mechanisms, enabling judicious assembly of various electronic and optoelectronic …

The interlayer twist is a new degree of freedom for forming moiré superlattices in 2D vertical
heterostructures, which is expected to play an important role in the emerging field of …

The Schottky barrier (SB) in the ultraclean van der Waals contact between two-dimensional
(2D) MoS2 and three-dimensional (3D) indium (In) strikingly deviates from the Schottky–Mott …