Topological insulator film growth by molecular beam epitaxy: A review

TP Ginley, Y Wang, S Law - Crystals, 2016 - mdpi.com
In this article, we will review recent progress in the growth of topological insulator (TI) thin
films by molecular beam epitaxy (MBE). The materials we focus on are the V2-VI3 family of …

[HTML][HTML] Topological materials by molecular beam epitaxy

M Brahlek, J Lapano, JS Lee - Journal of Applied Physics, 2020 - pubs.aip.org
Topology appears across condensed matter physics to describe a wide array of phenomena
which could alter, augment, or fundamentally change the functionality of many technologies …

Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator

T Liu, J Kally, T Pillsbury, C Liu, H Chang, J Ding… - Physical review …, 2020 - APS
We report the modification of magnetism in a magnetic insulator Y 3 Fe 5 O 12 thin film by
topological surface states (TSS) in an adjacent topological insulator Bi 2 Se 3 thin film …

A novel artificial condensed matter lattice and a new platform for one-dimensional topological phases

I Belopolski, SY Xu, N Koirala, C Liu, G Bian… - Science …, 2017 - science.org
Engineered lattices in condensed matter physics, such as cold-atom optical lattices or
photonic crystals, can have properties that are fundamentally different from those of naturally …

Plasmon coupling in topological insulator multilayers

Z Wang, TP Ginley, SV Mambakkam, G Chandan… - Physical Review …, 2020 - APS
Topological insulators (TIs) house two-dimensional Dirac plasmons on their surfaces. In TI
thin films, plasmons on the top and bottom surfaces couple electrostatically, giving rise to an …

Strain effects in topological insulators: Topological order and the emergence of switchable topological interface states in heterojunctions

H Aramberri, MC Muñoz - Physical Review B, 2017 - APS
We investigate the effects of strain on the topological order of the Bi 2 Se 3 family of
topological insulators by ab initio first-principles methods. Strain can induce a topological …

Solution to the Hole-Doping Problem and Tunable Quantum Hall Effect in Bi2Se3 Thin Films

J Moon, N Koirala, M Salehi, W Zhang, W Wu, S Oh - Nano letters, 2018 - ACS Publications
Bi2Se3, one of the most widely studied topological insulators (TIs), is naturally electron-
doped due to n-type native defects. However, many years of efforts to achieve p-type Bi2Se3 …

Spin-Sensitive Epitaxial In2Se3 Tunnel Barrier in In2Se3/Bi2Se3 Topological van der Waals Heterostructure

CH Li, J Moon, OMJ van 't Erve… - … Applied Materials & …, 2022 - ACS Publications
Current-generated spin arising from spin-momentum locking in topological insulator (TI)
surface states has been shown to switch the magnetization of an adjacent ferromagnet (FM) …

Criteria for realizing room‐temperature electrical transport applications of topological materials

M Brahlek - Advanced Materials, 2020 - Wiley Online Library
The unusual electronic states found in topological materials can enable a new generation of
devices and technologies, yet a long‐standing challenge has been finding materials without …

Terahertz Dirac Hyperbolic Metamaterial

Z Wang, S Nasir, S Bharadwaj, Y Liu… - ACS …, 2024 - ACS Publications
Hyperbolic metamaterials (HMMs) are engineered materials with a hyperbolic isofrequency
surface, enabling a range of interesting phenomena and applications including negative …