Performance analysis of metal gate engineered junctionless nanosheet fet with a ft/fmax of 224/342ghz for beyond 5g (b5g) applications
This manuscript for the first time investigates the effect of Dual Metal on Gate Junctionless
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …
Performance analysis of temperature on wireless performance for vertically stacked junctionless nanosheet field effect transistor
This paper investigates the effect of temperature on the wireless performance
characteristics, ie, linearity and harmonic distortion for the vertically stacked junctionless …
characteristics, ie, linearity and harmonic distortion for the vertically stacked junctionless …
DC and RF Performance Analysis of Junctionless Gate All Around Nanosheet MOSFET
J Debnath, M Anjum, MH Akhyear… - 2023 IEEE 9th …, 2023 - ieeexplore.ieee.org
This article presents an analysis of the DC and RF/analog performance of junctionless gate-
all-around nanosheet MOSFET (JL-GAA-NSFET), focusing on the evaluation of short …
all-around nanosheet MOSFET (JL-GAA-NSFET), focusing on the evaluation of short …
Redesigning of High Swing Super Wilson Current Mirror Circuit
Current Mirror (CM) circuit has filled in as the huge building thwart in fundamental circuit plot
coming to fruition to the introduction of incorporated circuits. In this paper, a high impedance …
coming to fruition to the introduction of incorporated circuits. In this paper, a high impedance …
Linearity Analysis of Charge Plasma-Induced Graded Channel Nanotube at Varying Temperatures
D Vaithiyanathan, B Raj - 2023 International Conference on …, 2023 - ieeexplore.ieee.org
Silicon-based Graded Channel Nanotube MOSFET (GC-NTFET) has been analyzed for the
change its surrounding temperature brings in its linearity performance. In this research …
change its surrounding temperature brings in its linearity performance. In this research …