Progress in 2D photonic crystal Fano resonance photonics
In contrast to a conventional symmetric Lorentzian resonance, Fano resonance is
predominantly used to describe asymmetric-shaped resonances, which arise from the …
predominantly used to describe asymmetric-shaped resonances, which arise from the …
Photonic crystal light emitting device
(73) Assignees: Lumileds Lighting US, LLC, San WO WO 2004/034025 A2 4/2004 Jose, CA
(US); Agilent Technologies, WO WO 2004/038767 A2 5/2004 Inc., Palo Alto, CA (US) …
(US); Agilent Technologies, WO WO 2004/038767 A2 5/2004 Inc., Palo Alto, CA (US) …
LED including photonic crystal structure
A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic
structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The …
structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The …
Photonic crystal structures and applications: Perspective, overview, and development
DW Prather, S Shi, J Murakowski… - IEEE Journal of …, 2006 - ieeexplore.ieee.org
In this paper, we present an overview of milestone achievements in the research and
development of photonic crystal structures and their perspective applications. We highlight …
development of photonic crystal structures and their perspective applications. We highlight …
Characteristics of a photonic bandgap single defect microcavity electroluminescent device
WD Zhou, J Sabarinathan… - IEEE Journal of …, 2001 - ieeexplore.ieee.org
A microcavity surface-emitting coherent electroluminescent device operating at room
temperature under pulsed current injection is described. The microcavity is formed by a …
temperature under pulsed current injection is described. The microcavity is formed by a …
[HTML][HTML] Printed large-area single-mode photonic crystal bandedge surface-emitting lasers on silicon
We report here an optically pumped hybrid III-V/Si photoic crystal surface emitting laser
(PCSEL), consisting of a heterogeneously integrated III-V InGaAsP quantum well …
(PCSEL), consisting of a heterogeneously integrated III-V InGaAsP quantum well …
Grown photonic crystals in semiconductor light emitting devices
A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure,
which includes a light emitting region disposed between an n-type region and a p-type …
which includes a light emitting region disposed between an n-type region and a p-type …
Subwavelength nanopatch cavities for semiconductor plasmon lasers
C Manolatou, F Rana - IEEE Journal of quantum electronics, 2008 - ieeexplore.ieee.org
We propose and analyze a family of nanoscale cavities for electrically pumped surface-
emitting semiconductor lasers that use surface plasmons to provide optical mode …
emitting semiconductor lasers that use surface plasmons to provide optical mode …
Optical characterization of two-dimensional photonic crystal cavities with indium arsenide quantum dot emitters
T Yoshie, A Scherer, H Chen, D Huffaker… - Applied Physics …, 2001 - pubs.aip.org
We have characterized the modes within two-dimensional photonic crystal nanocavities with
self-organized indium arsenide quantum dots as an active material. Highly localized donor …
self-organized indium arsenide quantum dots as an active material. Highly localized donor …
Continuous-wave operation of photonic band-edge laser near 1.55 μm on silicon wafer
G Vecchi, F Raineri, I Sagnes, A Yacomotti… - Optics …, 2007 - opg.optica.org
We report on the continuous-wave operation of a band edge laser at room temperature near
1.55 μm in an InGaAs/InP photonic crystal. A flat dispersion band-edge photonic mode is …
1.55 μm in an InGaAs/InP photonic crystal. A flat dispersion band-edge photonic mode is …