Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
Advanced Calculations for Defects in Materials
Advanced Calculations for Defects in Materials Edited by Audrius Alkauskas, Peter Deák,
Jörg Neugebauer, Alfredo Pasquarello, and Chris G. Van de Walle Advanced Calculations …
Jörg Neugebauer, Alfredo Pasquarello, and Chris G. Van de Walle Advanced Calculations …
[图书][B] Spontaneous ordering in semiconductor alloys
A Mascarenhas - 2002 - books.google.com
This book presents a comprehensive account of the phenomenon of spontaneous ordering.
The phenomenon, which can be categorized as a self-organized process, is observed to …
The phenomenon, which can be categorized as a self-organized process, is observed to …
Measurement of built-in electrical potential in III–V solar cells by scanning Kelvin probe microscopy
CS Jiang, HR Moutinho, DJ Friedman… - Journal of applied …, 2003 - pubs.aip.org
We report on direct measurements of the built-in electrical potential in III–V semiconductor-
based solar cell devices by using scanning Kelvin probe microscopy. Potential profiles on …
based solar cell devices by using scanning Kelvin probe microscopy. Potential profiles on …
The influence of the InGaP window layer on the optical and electrical performance of GaAs solar cells
J Plá, M Barrera, F Rubinelli - Semiconductor Science and …, 2007 - iopscience.iop.org
A wide band gap heterolayer is usually added to the front face of GaAs and other III–V solar
cells to favour transparency and to passivate the emitter. This extra front layer influences the …
cells to favour transparency and to passivate the emitter. This extra front layer influences the …
Evidence of type‐II band alignment at the ordered GaInP to GaAs heterointerface
Q Liu, S Derksen, A Lindner, F Scheffer… - Journal of applied …, 1995 - pubs.aip.org
Interfacial characteristics of Ga0. 51In0. 49P/GaAs heterostructures grown by metal‐organic
vapor‐phase epitaxy in the temperature range from 600° C to 730° C were studied …
vapor‐phase epitaxy in the temperature range from 600° C to 730° C were studied …
Band offsets of InGaP∕ GaAs heterojunctions by scanning tunneling spectroscopy
Y Dong, RM Feenstra, MP Semtsiv… - Journal of applied …, 2008 - pubs.aip.org
Scanning tunneling microscopy and spectroscopy are used to study In Ga P∕ Ga As
heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance …
heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance …
Electronic properties of GaxIn1− xP from pseudopotential calculations
N Bouarissa - Materials Chemistry and Physics, 2010 - Elsevier
Based on a pseudopotential scheme within the virtual crystal approximation, we present a
theoretical investigation of the electronic properties of GaxIn1− xP. The effect of alloy …
theoretical investigation of the electronic properties of GaxIn1− xP. The effect of alloy …
Mechanisms of photoluminescence upconversion at the GaAs/(ordered) GaInP2 interface
FAJM Driessen [Appl. Phys. Lett. 67, 1995, 2813] recently reported emission from
GaAs/(partially ordered) GaInP2 quantum wells grown on GaAs when the excitation photon …
GaAs/(partially ordered) GaInP2 quantum wells grown on GaAs when the excitation photon …
Electron Transfer Rate Constants for Majority Electrons at GaAs and GaInP2 Semiconductor−Liquid Interfaces
Current− voltage and impedance measurements have been conducted at different n-type III−
V semiconductor electrodes in acetonitrile as a function of the concentration of …
V semiconductor electrodes in acetonitrile as a function of the concentration of …