A method of operating a nonvolatile memory device configured to erase a memory block in
sub-block units comprises detecting state information of unselected sub-blocks associated …

Abstract A three-dimensional (3D) flash memory includes a first dummy word line disposed
between a ground select line and a lowermost main word line, and a second dummy word …

Nonvolatile memory device, operating methods thereof, and memory systems including the
same. In the operating method, a ground select line of a first string connected to a bit line …

A memory device has a divided reference line structure which supports sub-block erase in
NAND memory including a plurality of blocks. Each block in the plurality of blocks is coupled …

(57) ABSTRACT A method of operating a storage device having a nonvolatile memory
including at least one memory block having a plurality of Sub-blocks includes reading …

Techniques are provided for measuring the endurance of a set of data memory cells by
evaluating the threshold voltage (Vth) of associated dummy memory cells. A cell has a high …

A semiconductor device includes a substrate, gate electrodes and interlayer insulating
layers alternately stacked on the substrate, channel regions penetrating through the gate …

Nonvolatile memory device includes a memory cell array and a control circuit. The memory
cell array includes a plurality of memory blocks, the memory blocks including a plurality of …

A nonvolatile memory includes a plurality of memory blocks and an address decoder. The
address decoder is configured to activate a block word line corresponding to the memory …

BACKGROUND Embodiments of the inventive concept described herein relate to a
nonvolatile memory device and a method of erasing a nonvolatile memory device …