R Lin, Q Zhu, Q Guo, Y Zhu, W Zheng… - The Journal of Physical …, 2020 - ACS Publications
Low-dimensional metal halide perovskites possessing a large exciton binding energy have shown great promise in achieving efficient photonic emission required in the fields of lighting …
CC Chen, CC Yeh, CH Chen, MY Yu… - Journal of the …, 2001 - ACS Publications
The preparation of high-purity and-quality gallium nitride nanowires is accomplished by a catalytic growth using gallium and ammonium. A series of catalysts and different reaction …
DM Graham, A Soltani-Vala, P Dawson… - Journal of applied …, 2005 - pubs.aip.org
We have studied the low-temperature (T= 6 K) optical properties of a series of In Ga N∕ Ga N single-quantum-well structures with varying indium fractions. With increasing indium …
J Qiu, X Li, W He, SJ Park, HK Kim, YH Hwang… - …, 2009 - iopscience.iop.org
Well-aligned ultralong ZnO nanorod arrays with a length of 10 µm have been synthesized on glass substrates using a preheating hydrothermal method. The diameter of the nanorods is …
ZG Qian, WZ Shen, H Ogawa… - Journal of Physics …, 2004 - iopscience.iop.org
We review recent experimental studies on the lattice dynamical properties of novel semiconductor InN thin films. Most of the experimental results are concerned with Raman …
Z Liu, K Wang, X Luo, S Liu - Optics express, 2010 - opg.optica.org
Precise optical modeling of blue light-emitting diodes (LEDs) is constructed by reasonable optical parameters and Monte Carlo ray-tracing with the capability of precisely predicting …
H Schömig, S Halm, A Forchel, G Bacher, J Off… - Physical review …, 2004 - APS
Photoluminescence (PL) spectroscopy with subwavelength lateral resolution has been employed to probe individual localization centers in a thin InGaN/GaN quantum well …
This letter reports the synthesis of indium nitride (InN) nanowires on gold-patterned silicon substrates in a controlled manner using a method involving thermal evaporation of pure …
XA Cao, SF LeBoeuf, LB Rowland, CH Yan… - Applied Physics …, 2003 - pubs.aip.org
Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) has been investigated to illustrate the role of localization effects …