Positive muons implanted into diamond and zincblende-structured semiconductors often
form hydrogen-like paramagnetic muonium (μ+− e−) states whose characteristics can be …

The method of obtaining pure polycrystalline silicon is described, followed by short accounts
of how this material is converted into single-crystal form either by the Czochralski (CZ) …

A review is given on the diffusion, solubility and electrical activity of 3 d transition metals in
silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and …

A definitive picture of the silicon/silicon dioxide interface and its associated electrical defect
centers continues to be an important goal of device research. t Electron spin resonance …

A review is given of what has been learned from electron paramagnetic resonance (EPR)
and localized vibrational mode (LVM) spectroscopy concerning isolated lattice vacancies …

The hyperfine spectrum associated with unpaired electrons at the (111) Si/Si02 interface (P
b centers) is reported for the first time. Electron paramagnetic resonance measurements …

The defect structure of the Si/SiO 2 interface is increasingly important as the size of metal-
oxide-semiconductor (MOS) integrated circuits shrinks into the submicron regime. Extensive …

Three new EPR spectra (Si− A 1 4,− A 1 5, and− A 16) and two previously known spectra (S
i− P 2 and− P 4) are observed for the first time in electron-irradiated silicon. The microscopic …

This article shows that chains of optical or microwave emitters coupled to a one-dimensional
(1D) waveguide support subradiant states with close pairs of excited emitters, which have …

An electron-paramagnetic-resonance (EPR) study dealing with the means for introducing
substitutional N into silicon and the structure of N centers is presented in this paper. Nitrogen …