We report on a model for the bipolar amplification effect (BAE), which enables defect density
measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an …

Doping in semiconductor nanocrystals have a significant impact on electronic structures and
the relative studies are needed in order to deeply understand the doping effect in nanoscale …

We report an ultralow-field frequency-swept electrically detected magnetic resonance
(fsEDMR) measurement scheme sensitive to so-called ultrastrong coupling in paramagnetic …

A novel post-oxidation annealing (POA) process with supercritical N 2 O (SCN 2 O) fluid is
reported to be highly effective in improving the interface properties of the SiO 2/4H-silicon …

We have developed a new ultra-low field frequency-swept (FS) electrically detected
magnetic resonance (EDMR) spectrometer to perform sensitive EDMR measurements of 4H …

Pyroelectrics are a wide class of materials that change their polarization when the system
temperature varies. This effect is utilized for a number of different commercial and industrial …

4H-SiC metal-oxide-semiconductor field-effect transistors have a substantially lower
effective channel mobility than silicon-based counterparts. Nitric oxide annealing has been …

The 4H-SiC polytype is arguably the most technologically relevant due to its relatively large
band-gap which give rise to its preferred application in high-power and high-temperature …

Two observations and their analysis are performed in this short communication. One, the
bulk defects Z1/2 and EH5 in the 4H-SiC epitaxial layers manifest themselves as SiO2/4H …

Abstract 4H-SiC metal-oxide-semiconductor field-effect transistors are promising for high
power and high temperature applications but suffer from a relatively low effective channel …