Zirconium oxide is a promising dielectric material for electronic applications due to favorable
properties such as large band gap and high dielectric constant. It is compatible with solution …

The study reports in-situ nanocrystallization of Pb stabilized t-ZrO 2 in an amorphous Si (Pb,
Zr) OC matrix (PZSiOC) derived from lead zirconate modified poly (hydridomethylsiloxane) …

Herein, zirconia thin films are successfully prepared on silicon substrates using the sol–gel
method, and the microstructure, optical, and electrical properties of zirconia high‐k gate …

We have proposed an optimized ZrO2 dielectric layer via solution processing for use in
amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). The optimized conditions …

We fabricated InSnZnO (ITZO) thin-film transistors (TFTs) with a high-permittivity (κ) ZrO2
gate insulator using a solution process and explored the microstructure and electrical …

For a very thin dielectric MOS capacitor, the influence of the interface layer on MOS
capacitance extraction is not negligible. We report a new correction method for a thin …

The obligatory role of vitamin A is well reported in human health yet its deficiency is
prevailing across the globe, irrespective of geography, socioeconomic status, ethnicity, age …

Abstract An Al/ZrO 2/IL/n-Si (IL: interface layer) MOS capacitor has been fabricated by metal
organic decomposition of ZrO 2 and thermal deposition Al. We have measured parallel …

In this study, MOS capacitors of Al/ZrO 2/IL/n-Si (IL: interface layer) have been fabricated.
Bias scan and frequency scan data of measured parallel capacitance (C m) and parallel …

In this study, we investigated the effects of hydrogen peroxide (H2O2) on solution-processed
zirconium oxide (ZrO2) dielectric materials. The addition of H2O2 into ZrO2 dielectric …